Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4: Difference between revisions
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*[[/Barc Etch|Barc Etch]] | *[[/Barc Etch|Barc Etch]] | ||
*[[/SiO2 Etch|SiO2 Etch]] | *[[/SiO2 Etch|SiO2 Etch]] | ||
*[[/Silicon Nitride Etch|Silicon Nitride Etch]] | |||
*[[/Nitride Etch|Nitride etch with SiO2 etch recipes]] | *[[/Nitride Etch|Nitride etch with SiO2 etch recipes]] | ||
*[[/Slow etch|Slow etch of silicon nitride and silicon oxide]] | *[[/Slow etch|Slow etch of silicon nitride and silicon oxide]] | ||
Latest revision as of 13:16, 14 July 2025
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Pegasus 4 - 150mm silicon oxide and silicon nitride etching
DRIE-Pegasus 4 is dedicated Silicon oxide and Silicon nitride etching. It is originally designed for silicon etching but gas mass flow controllers has been changed to optimize silicon oxide and silicon nitride etching. The system is setup for 6" wafers. Sampler samples has to be bonded to a 6" carrier to be etched in the system.
The user manual and contact information can be found in LabManager:
DRIE Pegasus 4 in LabManager - requires login
Process information
Standard recipes
- Barc Etch
- SiO2 Etch
- Silicon Nitride Etch
- Nitride etch with SiO2 etch recipes
- Slow etch of silicon nitride and silicon oxide
Wafer bonding
To find information on how to bond wafers or chips to a carrier wafer, click here.