Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]]) | ||
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! General description | ! General description | ||
|E-beam deposition of Chromium | |E-beam deposition of Chromium | ||
|Thermal deposition of Chromium | |Thermal deposition of Chromium | ||
|Sputter deposition of Chromium | |Sputter deposition of Chromium | ||
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! Pre-clean | ! Pre-clean | ||
|Ar ion gun (only in E-beam evaporator Temescal) | |Ar ion gun (only in E-beam evaporator Temescal) | ||
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|RF Ar clean | |RF Ar clean | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 300 nm* | ||
| | |100 nm | ||
|at least up to 200 nm | |at least up to 200 nm | ||
|at least up to 200 nm | |at least up to 200 nm | ||
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! Deposition rate | ! Deposition rate | ||
|1 Å/s to 10 Å/s | |1 Å/s to 10 Å/s | ||
|1 Å/s | |1 Å/s | ||
|Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log. | |Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log. | ||
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*3x8" wafers (ask for holder) | *3x8" wafers (ask for holder) | ||
*Many smaller pieces | *Many smaller pieces | ||
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* | Up to *3x 4" wafers or | ||
* | *1x6" or 1x 8" wafer | ||
*Many smaller samples | |||
* | |||
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*1x6" wafers | *1x6" wafers | ||
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Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | ||
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Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | ||
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! Comment | ! Comment | ||
| Takes approx. 20 min to pump down | | Takes approx. 20 min to pump down | ||
| Takes approx. 20 min to pump down | | Takes approx. 20 min to pump down | ||
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