Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]) | |||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]]) | ||
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E-beam deposition of Aluminium | E-beam deposition of Aluminium. Option to tilt substrate. | ||
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E-beam deposition of Aluminium | E-beam deposition of Aluminium. Option to tilt substrate. | ||
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Sputter deposition of Aluminium | Sputter deposition of Aluminium (DC) | ||
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Sputter deposition of Aluminium | Sputter deposition of Aluminium (DC, Pulsed DC, HIPIMS) | ||
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Aluminum deposition onto unexposed e-beam resist | Aluminum deposition onto unexposed e-beam resist | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion etch | |Ar ion etch | ||
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|RF Ar clean | |RF Ar clean | ||
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|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to ~0.5µm (very time consuming ) | |10Å to ~0.5µm (very time consuming ) | ||
|10Å to ~0.5µm | |10Å to ~0.5µm | ||
|10Å to 1 µm* | |10Å to 1 µm* | ||
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! Deposition rate | ! Deposition rate | ||
|1Å/s to 10Å/s | |1Å/s to 10Å/s | ||
|1Å/s to | |1Å/s to 5Å/s | ||
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s | |Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s | ||
|Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | |Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | ||
|0.5, 1, or 2 Å/s | |0.5, 1, or 2 Å/s | ||
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*smaller pieces | *smaller pieces | ||
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* | *Up to 4x6" or 3x8" wafers | ||
*smaller pieces | |||
* | |||
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*1x4" wafer or | *1x4" wafer or | ||
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*up to 10x6" wafers | *up to 10x6" wafers | ||
*or many smaller samples | *or many smaller samples | ||
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*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates) | *Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates) | ||
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Approx. 20 min | Approx. 20-30 min | ||
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Approx. | Approx. 20-30 min | ||
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Approx. 10 min | Approx. 10 min | ||
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Approx. 5 min plus 6 min transfer time | Approx. 5 min plus 6 min transfer time | ||
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Approx. 15-20 min | |||
Approx. 15 min | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID= | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]. | ||
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Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID= | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet]. | ||
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*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] | *Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3] | ||
* Special carrier for III-V materials. | * Special carrier for III-V materials. | ||
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Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]. | ||
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|} | |} | ||