Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11

The nano1.1 recipe

Recipe nano1.1

Recipe	Gas	C4F8 38 sccm, SF6 52 sccm
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr
	Power	600 W CP, 50 W PP
	Temperature	10 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	1815
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	1dfhj10 nm zep etched down to 6dgh4 nm

• The results of the nano1.1 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 600 W CP, 50 W PP, 10 degs, 120 secs

Nominal trench line width	'	30	60	90	120	150	Avg	Std
Etch rates	nm/min	183	218	232	249	256	228	29
Sidewall angle	degs	95	94	94	93	93	94	1
Cd loss	nm/edge	-2	-4	-16	-15	-27	-13	10
CD loss foot	nm/edge	-2	-4	-16	-15	3	-7	9
Bowing		36	40	49	48	40	42	6
Curvature		-55	-50	-39	-39	-42	-45	7
zep	nm/min						172

Comments

The lower coil power run may still be isotropic-looking either because of a lack of deposition in the process, or because the bias increases as the coil power is decreased, hence the wafer would have received a more phyisically-aggressive process. Lower temp, lower coil + lower platen may be worth a look.