Specific Process Knowledge/Lithography/Descum: Difference between revisions

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 {| class="wikitable"
 |-
-! Test setup !! Single substrate !! Center of 3 substrates
+!  !! Single substrate !! Center of 3 substrates
 |-
-! scope=row| Test results
+! scope=row style="text-align: left;" | Test results: ashing rate
-| Ashing rate: 5.7 ±2.1 nm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 nm/min<br>Non-uniformity: 0.4 ±0.2%
+| 5.7 ±2.1 nm/min|| 3.8 ±1.6 nm/min
 |-
-! scope=row| Wafers
+! scope=row style="text-align: left;" | Test results: non-uniformity
+| 0.6 ±0.4% || 0.4 ±0.2%
+|-
+! scope=row style="text-align: left;" | Wafers
 | 1 || 3
 |-
-! scope=row| Wafer size
+! scope=row style="text-align: left;" | Wafer size
 | 100 mm || 100 mm
 |-
-! scope=row| Boat position
+! scope=row style="text-align: left;" | Boat position
 | Center of chamber || Center of chamber
 |-
-! scope=row| Test wafer position
+! scope=row style="text-align: left;" | Test wafer position
 | Center of boat || Center of boat
 |-
-! scope=row| Total gas flow rate
+! scope=row style="text-align: left;" | Total gas flow rate
 | 200 sccm || 200 sccm
 |-
-! scope=row| Gas mix ratio
+! scope=row style="text-align: left;" | Gas mix ratio
 | 50% N<sub>2</sub> || 50% N<sub>2</sub>
 |-
-! scope=row| Chamber pressure
+! scope=row style="text-align: left;" | Chamber pressure
 | 1.3 mbar || 1.3 mbar
 |-
-! scope=row| Power
+! scope=row style="text-align: left;" | Power
 | 200 W || 200 W
 |-
-! scope=row| Test processing time
+! scope=row style="text-align: left;" | Test processing time
 | Tested parameter || Tested parameter
 |-
-! scope=row| Test average temperature
+! scope=row style="text-align: left;" | Test average temperature
 | 33°C || 33°C
 |}