Specific Process Knowledge/Lithography/Descum: Difference between revisions
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=Plasma Asher 4= | =Plasma Asher 4= | ||
==Descum processing in plasma asher 4 & 5== | ==Descum processing in plasma asher 4 & 5== | ||
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers. | Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.<br> | ||
When running multiple wafers, the first and last wafers should always be dummy wafers. | |||
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login''' | ||
'''Typical descum parameters''' | |||
*O<sub>2</sub>: 100 sccm | |||
*N<sub>2</sub>: 100 sccm | |||
*Pressure (DSC): 1.3 mbar | |||
*Power: 200 W | |||
*Chamber temperature at start: 30°C | |||
*Time (single wafer): 5-10 minutes = 35-72 nm ashed | |||
*Time (multiple wafers): 10-15 minutes = 40-80 nm ashed | |||
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[[File:PA_descum_single_v2.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]] | [[File:PA_descum_single_v2.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]] | ||
'''Single wafer | '''Single wafer ashing rate'''<br> | ||
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| Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8 | | Ashing rate [nm/min]: || 5.2 || 3.1 || 7.0 || 7.2 || 5.8 | ||
|} | |||
'''Single wafer non-uniformity'''<br> | |||
{| class="wikitable" | |||
|- | |||
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15 | |||
|- | |- | ||
| Film thickness range, before descum [nm]: || 11 || 12 || 10 || 11 || 9 | | Film thickness range, before descum [nm]: || 11 || 12 || 10 || 11 || 9 | ||
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[[File:PA_descum_multi_v2.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]] | [[File:PA_descum_multi_v2.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]] | ||
'''Multi wafer | '''Multi wafer ashing rate'''<br> | ||
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| Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3 | | Ashing rate [nm/min]: || 4.3 || 3.4 || 2.0 || 4.0 || 5.3 | ||
|} | |||
'''Multi wafer non-uniformity'''<br> | |||
{| class="wikitable" | |||
|- | |||
! Ashing time [min]: !! 1 !! 2 !! 5 !! 10 !! 15 | |||
|- | |- | ||
| Film thickness range, before descum [nm]: || 11 || 13 || 11 || 12 || 14 | | Film thickness range, before descum [nm]: || 11 || 13 || 11 || 12 || 14 | ||
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=Plasma Asher 5= | =Plasma Asher 5= | ||
<span style="color:red">Coming soon</span> | <span style="color:red">Coming soon</span> | ||
Revision as of 12:42, 26 February 2025
The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.
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Plasma Asher 1
Plasma asher 1 was decommissioned 2024-12-02.
Information about decommissioned tool can be found here.
Plasma Asher 2
Plasma asher 2 was decommissioned 2024-12-02.
Information about decommissioned tool can be found here.
Plasma Asher 3: Descum
The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
Testing different power settings:
Recipe settings:
- O2 flow: 5 sccm
- N2 flow: 0
- Pressure: 0.2 mbar
- Power: Varied
Experiment parameters:
|
Testing different pressure settings:
Recipe settings:
- O2 flow: varied
- N2 flow: 0
- Pressure: varied
- Power: V100% (100 W)
Experiment parameters:
|
Ashing of AZ5214E resist:
Recipe settings:
- O2 flow: varied
- N2 flow: 0
- Pressure: varied
- Power: V100% (100 W)
Experiment parameters:
|
Plasma Asher 4
Descum processing in plasma asher 4 & 5
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.
When running multiple wafers, the first and last wafers should always be dummy wafers.
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Typical descum parameters
- O2: 100 sccm
- N2: 100 sccm
- Pressure (DSC): 1.3 mbar
- Power: 200 W
- Chamber temperature at start: 30°C
- Time (single wafer): 5-10 minutes = 35-72 nm ashed
- Time (multiple wafers): 10-15 minutes = 40-80 nm ashed
| Test setup | Single substrate | Center of 3 substrates |
|---|---|---|
| Test results | Ashing rate: 5.7 ±2.1 nm/min Non-uniformity: 0.6 ±0.4% |
Ashing rate: 3.8 ±1.6 nm/min Non-uniformity: 0.4 ±0.2% |
| Wafers | 1 | 3 |
| Wafer size | 100 mm | 100 mm |
| Boat position | Center of chamber | Center of chamber |
| Test wafer position | Center of boat | Center of boat |
| Total gas flow rate | 200 sccm | 200 sccm |
| Gas mix ratio | 50% N2 | 50% N2 |
| Chamber pressure | 1.3 mbar | 1.3 mbar |
| Power | 200 W | 200 W |
| Test processing time | Tested parameter | Tested parameter |
| Test average temperature | 33°C | 33°C |
Single wafer ashing rate
| Ashing time [min]: | 1 | 2 | 5 | 10 | 15 |
|---|---|---|---|---|---|
| Ashing amount [nm]: | 5.2 | 6.2 | 35.1 | 72.3 | 87.1 |
| Ashing rate [nm/min]: | 5.2 | 3.1 | 7.0 | 7.2 | 5.8 |
Single wafer non-uniformity
| Ashing time [min]: | 1 | 2 | 5 | 10 | 15 |
|---|---|---|---|---|---|
| Film thickness range, before descum [nm]: | 11 | 12 | 10 | 11 | 9 |
| Pre-ashing non-uniformity [%]: | 0.37 | 0.40 | 0.33 | 0.37 | 0.30 |
| Film thickness range, after descum [nm]: | 10 | 10 | 12 | 19 | 33 |
| Post-ashing non-uniformity [%]: | 0.33 | 0.33 | 0.41 | 0.66 | 1.18 |
Multi wafer ashing rate
| Ashing time [min]: | 1 | 2 | 5 | 10 | 15 |
|---|---|---|---|---|---|
| Ashing amount [nm]: | 4.3 | 6.7 | 10.1 | 39.5 | 78.8 |
| Ashing rate [nm/min]: | 4.3 | 3.4 | 2.0 | 4.0 | 5.3 |
Multi wafer non-uniformity
| Ashing time [min]: | 1 | 2 | 5 | 10 | 15 |
|---|---|---|---|---|---|
| Film thickness range, before descum [nm]: | 11 | 13 | 11 | 12 | 14 |
| Post-ashing non-uniformity [%]: | 0.37 | 0.43 | 0.37 | 0.40 | 0.46 |
| Film thickness range, after descum [nm]: | 11 | 9 | 10 | 12 | 21 |
| Post-ashing non-uniformity [%]: | 0.37 | 0.30 | 0.33 | 0.41 | 0.74 |
Plasma Asher 5
Coming soon