Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141: Difference between revisions

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Revision as of 08:36, 9 May 2011

The nano1.41 recipe

Recipe nano1.41
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 75 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2001
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 10 nm