Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12: Difference between revisions

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C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs
C4F8 52 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs
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== Comments ==
== Comments ==


Lower temperature certainly looks like a step in the right direction.  Confirms that the process was too etch aggressive previously, hence the isotropic profiles.
Lower temperature certainly looks like a step in the right direction.  Confirms that the process was too etch aggressive previously, hence the isotropic profiles.

Revision as of 14:23, 4 May 2011

The nano1.2 recipe

Recipe nano1.2
Recipe Gas C4F8 38 sccm, SF6 52 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature -10 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 1817
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 343 nm zep etched down to 154 nm


Comments

Lower temperature certainly looks like a step in the right direction. Confirms that the process was too etch aggressive previously, hence the isotropic profiles.