Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
-|style="background:LightGrey; color:black"|Process Temperature
+|style="background:LightGrey; color:black"|Process temperature
 |style="background:WhiteSmoke; color:black"|
-*712-720 <sup>o</sup>C
+*712 - 720 <sup>o</sup>C
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 |style="background:LightGrey; color:black"|Process pressure
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-*190 mTorr
+*175 mTorr
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 |style="background:LightGrey; color:black"|Gas flows
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-*TEOS: 50 sccm
+*TEOS: ~50 sccm. <i>The exact flow is not know - the setpoint is much lower than 50 sccm, but the MFC is not calibrated for TEOS</i>
 *O<sub>2</sub>: 0 sccm
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 |style="background:LightGrey; color:black"|Batch size
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-*1-15 4" wafers per run
+*1-15 4" wafers per run (including a test wafer)
-*Deposition on both sides of the substrate
+*Deposition on both sides of the wafers
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (only clean wafers and RCA cleaned)
+*Silicon and fused silica/quartz wafers. <i>New wafers supplied by Nanolab, can to go directly into the furnace</i>
-**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
+*Wafers from the A stack, B stack and E stack furnaces. <i> The wafers have to go directly into the furnace </i>
-**from furnaces in stack A or B in cleanroom 2
+*Processed wafers (only allowed materials - see the cross contamination information in LabManager). <i> The wafers have to be RCA cleaned </i>
-*Quartz wafers (RCA cleaned)
-*Silicon carbide sample(RCA cleaned)
+Note:
+*RCA cleaned wafers can be stored in an RCA transfer box.
+*Wafers must NOT have been exposed to metal prior to processing, and they must not have been stored in dirty boxes (e.g. boxed that might have contained wafers with metal).
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