Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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-Deposition of TEOS - Silicon dioxide based on tetraethoxysilane
+Deposition of TEOS oxide
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 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
 |style="background:LightGrey; color:black"|Film thickness
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-*0 nm - 2000 nm
+*0 nm - 3000 nm
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 |style="background:LightGrey; color:black"|Step coverage
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-*Good
+*Very good
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 |style="background:LightGrey; color:black"|Film quality
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 == Rules for storage and RCA cleaning of wafers to the B3 furnace ==
 *[[Specific_Process_Knowledge/Thermal_Process/Storage_and_cleaning_of_wafer_to_the_A,_B,_C_and_E_stack_furnaces|Storage and cleaning of wafer to the B3 furnace]]