Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
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*Annealing in N<sub>2</sub> | *Annealing in N<sub>2</sub> | ||
*Annealing in forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub> - Being tested) | |||
*Dry oxidation with O<sub>2</sub> | *Dry oxidation with O<sub>2</sub> | ||
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*N<sub>2</sub> (nitrogen): 0-10 SLM | *N<sub>2</sub> (nitrogen): 0-10 SLM | ||
*O<sub>2</sub> (oxygen): 0-10 SLM | *O<sub>2</sub> (oxygen): 0-10 SLM | ||
*Forming gas (5% H<sub>2</sub>/95 % N<sub>2</sub>): 0-5 SLM - Being tested | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
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*1-30 4" wafers (or 2" wafers) | *1-30 4" wafers (or 2" wafers) | ||
*1 6" wafer (2 6" wafers with less good uniformity) - Requires training | *1 6" wafer (2 6" wafers with less good uniformity) - Requires training | ||
*Small samples placed on a 6" dummy wafer - Requires | *Small samples placed on a 6" dummy wafer - Requires training | ||
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| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
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==Oxidation uniformity for 6" wafers== | ==Oxidation uniformity for 6" wafers== | ||