Revision as of 13:12, 11 December 2024

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Plasma Asher 1

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool

Plasma Asher 2

Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool

Plasma Asher 3: Descum

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).

Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.

Testing different power settings:

Recipe settings:

O2 flow: 5 sccm
N2 flow: 0
Pressure: 0.2 mbar
Power: Varied

Experiment parameters:

	FW/REV	C2/C1	Power
recipe 1	50/0	52/31	50%
recipe 2	100/0	53/31	100%
recipe 3	20/0	51/34	20%

Testing different pressure settings:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	5	0,2
recipe 2	100/0	37/38	45	0,8

Ashing of AZ5214E resist:

Recipe settings:

O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters:

	FW/REV	C2/C1	Oxygen	Pressure
recipe 1	100/0	53/31	17	0,4
recipe 2	100/0	37/39	45	0,8

@@ Line 14: / Line 14: @@
 =Plasma Asher 2=
-''Jitka Urbánková & Jesper Hanberg, December 2019''
+<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
-[[image:descum_graf.jpg|640px|thumb|Descum results plasma asher 2 - recipe 1]]
-<span style="color:red">This tool has been decomissioned 2024-12-02.</span>
+===[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool]]===
-The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
-Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
-'''recipe 1:'''
-*O2 flow: 100 ml/min
-*N2 flow: 100 ml/min
-*Power: 150 W
-{| {{table}}
-| align="center" |
-{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
-|- style="background:LightGrey"
-|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
-|-
-|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
-|-
-|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
-|-
-|}
-|}
-[[image:graf_descum-recipe2.png|640px|thumb|Descum results plasma asher 2 - recipe 2]]
-'''recipe 2:'''
-*O2 flow: 500 ml/min
-*N2 flow: 0 ml/min
-*Power: 200 W
-{| {{table}}
-| align="center" |
-{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
-|- style="background:LightGrey"
-|'''Ashing time (min)'''|| 1	||2	||3	||4	||5	||6	||7	||8	||10	||12	||15	||20
-|-
-|'''Etched Thickness (nm)'''||8,1	||9,4	||16,8	||55,2	||44,0	||47,5	||42,5	||55,1	||85,3	||122,4	||184,8	||305,9
-|-
-|'''Initial temperature (°C)'''||22	||21	||21	||22	||22	||22	||21	||21	||20	||21	||21	||22
-|-
-|}
-|}
-A linear time dependence was observed after etching 7 minutes or more (recipe 2).
-<br clear="all" />
 =Plasma Asher 3: Descum=