Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 2kW micro: Difference between revisions

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Revision as of 15:41, 11 November 2024


Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

DREM 2kW runs on complete set of Travka 5 to 80 % wafers

Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

DREM 2kW runs on complete set of Travka 5 to 80 % wafers

DREM response to variations is trench widths and etch loads
Date Substrate information Process information
Wafer info Mask/exposed area Tool Conditioning Recipe Wafer ID Comments
27/4-2020 Travka05 wafer Si / 5% Peg 1 S022327 DREM 2kW RF MU runs nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022328 Resist etch rate: 62 nm/min Process log entry
SEM image: a060 a059 a058 a057 a056 a055 a054 a053 a052 a051 a050 a049
Trench width (um) 2.08 3.1 4.2 6.08 10.22 15.27 25.26 39.7 50.5 99.82 150.09 299.56
Etched depth (um) 22.96 27.05 28.46 31.57 35.48 37.96 40.7 42.39 43.24 44.09 44.54 44.56
Etch rate (um/min) 2.09 2.46 2.59 2.87 3.23 3.45 3.7 3.85 3.93 4.01 4.05 4.05
Etch rate (nm/cyc) 153 180 190 210 237 253 271 283 288 294 297 297
Sidewall bowing (%) 0.1 0.6 0.2 0.6 0.1 0.2 -0.1 0.2 -0.4 -0.3 -0.3 -1.1
Sidewall angle (degs) 90.85 90.98 90.94 91.18 91.45 91.4 91.68 92.02 91.78 92.3 92.53 92.35
Bottom bowing (%) 16.93 14.87 20.32 20.1 19.02 17.6 14.71 13.78 10.7 6.84 4.53 2.34
Aspect ratio 9.5 7.61 6.12 4.71 3.2 2.35 1.54 1.03 0.84 0.43 0.29 0.15
27/4-2020 Travka10 wafer, Si / 10% Peg 1 S022328 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022329 Resist etch rate: 60 nm/min Process log entry
SEM image: a061 a062 a063 a064 a065 a066 a067 a068 a069 a070 a071 a072
Trench width (um) 1.78 2.88 4.24 5.78 10.22 15.36 25.48 40.51 75.63 100.86 200.75 299.63
Etched depth (um) 21.26 24.82 27.54 31.1 35.34 38.21 41.17 42.98 44.58 45.15 45.16 44.68
Etch rate (um/min) 1.93 2.26 2.5 2.83 3.21 3.47 3.74 3.91 4.05 4.1 4.11 4.06
Etch rate (nm/cyc) 142 165 184 207 236 255 274 287 297 301 301 298
Sidewall bowing (%) -0.2 0.2 -0.1 0.2 -0.2 -0.4 -0.2 -0.8 -0.6 -0.7 -1.3 -1.4
Sidewall angle (degs) 90.47 90.61 90.35 90.98 90.78 91.08 91.11 91.43 91.97 91.55 92.07 92.37
Bottom bowing (%) 26.03 15.16 18.16 17.1 17.51 17.21 15.48 13.54 8.58 6.93 3.43 2.43
Aspect ratio 10.89 7.92 6.26 4.94 3.31 2.38 1.57 1.04 0.58 0.44 0.22 0.15
27/4-2020 Travka20 wafer Si / 20 Peg 1 S022329 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022330 Resist etch rate: 59 nm/min Process log entry
SEM image: a086 a085 a084 a083 a082 a081 a080 a078 a077 a076 a075 a074 a073
Trench width (um) 1.91 3.04 3.68 5.89 10.08 15.02 40.03 49.99 75.51 100.03 148.99 199.75 298.84
Etched depth (um) 21.58 24.69 26.33 29.81 33.68 36.25 40.32 40.95 41.68 41.77 41.84 42.1 41.82
Etch rate (um/min) 1.96 2.24 2.39 2.71 3.06 3.3 3.67 3.72 3.79 3.8 3.8 3.83 3.8
Etch rate (nm/cyc) 144 165 176 199 225 242 269 273 278 278 279 281 279
Sidewall bowing (%) 0.2 0.4 0.3 0.4 0.4 0.1 -0.1 -0.5 -0.6 -0.5 -0.6 -0.8 -0.3
Sidewall angle (degs) 90.77 90.91 90.93 91.14 91.39 91.49 91.66 91.91 91.96 92.38 92.57 92.96 93.05
Bottom bowing (%) 23.69 15.29 19.28 16.95 17.41 17.41 12.51 11.52 8.37 6.7 4.3 3.23 2.03
Aspect ratio 9.8 7.2 6.42 4.6 3.1 2.28 0.98 0.8 0.54 0.41 0.28 0.21 0.14
27/4-2020 Travka35 wafer Si / 35% Peg 1 S022330 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022331 Resist etch rate: 66 nm/min Process log entry
SEM image: a087 a088 a089 a090 a091 a092 a093 a094 a095 a096 a097
Trench width (um) 1.61 2.71 3.71 7.69 9.87 15.04 25.1 40.03 75.03 199.26 299.66
Etched depth (um) 18.41 22.24 24.41 29.54 31.11 33.55 35.77 37.1 37.96 38.18 38.24
Etch rate (um/min) 1.67 2.02 2.22 2.69 2.83 3.05 3.25 3.37 3.45 3.47 3.48
Etch rate (nm/cyc) 123 148 163 197 207 224 238 247 253 255 255
Sidewall bowing (%) -0.2 0.1 0.1 0.4 0.2 0.1 -0.3 -0.2 -0.5 -1.1 -1.2
Sidewall angle (degs) 90.33 90.75 90.89 91.13 91.07 91.31 91.34 91.69 91.84 92.49 92.44
Bottom bowing (%) 24.26 20.15 19.99 19.05 17.3 16.29 16.68 13.21 7.68 3.61 2.18
Aspect ratio 10.7 7.42 5.99 3.58 2.98 2.13 1.38 0.9 0.5 0.19 0.13
27/4-2020 Travka50 wafer Si / 50% Peg 1 S022331 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022332 Resist etch rate: 58 nm/min Process log entry
SEM image: a110 a109 a108 a107 a106 a105 a103 a102 a101 a099 a098
Trench width (um) 1.69 2.57 3.68 7.62 14.53 39.96 49.94 100.08 199.63 298.35 299.12
Etched depth (um) 17.88 20.47 22.58 27.07 30.78 33.82 34.11 34.67 34.66 34.26 34.54
Etch rate (um/min) 1.63 1.86 2.05 2.46 2.8 3.07 3.1 3.15 3.15 3.11 3.14
Etch rate (nm/cyc) 119 136 151 180 205 225 227 231 231 228 230
Sidewall bowing (%) 0.1 0.1 0.1 0.2 0.2 -0.5 -0.3 -0.8 -0.7 -2 -1.5
Sidewall angle (degs) 90.58 90.8 90.9 91.17 91.56 91.68 91.62 92.08 92.15 93.34 92.48
Bottom bowing (%) 24.2 20.91 19.84 16.14 17.61 12.38 10.43 5.77 3.26 1.83 1.96
Aspect ratio 9.58 7.18 5.61 3.32 2.01 0.83 0.67 0.34 0.17 0.11 0.11
27/4-2020 Travka65 wafer Si / 65% Peg 1 S022332 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022333 Resist etch rate: 58 nm/min Process log entry
SEM image: a111 a112 a113 a114 a115 a116 a117 a118 a119 a120 a121 a122 a123 a124
Trench width (um) 2.5 3.42 5.44 7.37 9.37 14.4 24.44 39.54 74.69 100.04 150.41 199.78 299.94 301.31
Etched depth (um) 18.9 20.55 23.1 24.82 26.16 28.28 30.04 31.02 31.45 30.89 31.28 30.52 31.47 31.59
Etch rate (um/min) 1.72 1.87 2.1 2.26 2.38 2.57 2.73 2.82 2.86 2.81 2.84 2.77 2.86 2.87
Etch rate (nm/cyc) 126 137 154 165 174 189 200 207 210 206 209 203 210 211
Sidewall bowing (%) 0 0.1 0.2 0.1 0.2 0.4 0.2 -0.3 -0.7 -1.4 -0.7 -0.8 -0.9 -1
Sidewall angle (degs) 90.75 90.75 90.96 91.03 91.19 91.48 91.42 91.86 91.99 91.88 91.81 92.79 92.54 92.34
Bottom bowing (%) 18.3 18.42 16.33 16.3 16.79 18.16 14.77 11.67 6.69 4.18 3.28 1.66 1.42 1.93
Aspect ratio 6.89 5.58 3.97 3.18 2.64 1.87 1.2 0.77 0.42 0.31 0.21 0.15 0.1 0.1
27/4-2020 Travka80 wafer Si / 80% Peg 1 S022333 + 1min TDESC clean nanolab/ jmli / DREM / DREM 2kW nano, 150 cycles or 11:00 minutes S022334 Resist etch rate: 79 nm/min Process log entry
SEM image: a136 a135 a134 a133 a126 a125 a132 a131 a130 a129 a128 a127
Trench width (um) 5.51 9.61 14.79 24.6 24.8 25.02 49.42 74.63 99.55 199.49 299.49 299.54
Etched depth (um) 21.45 24.21 25.99 27.45 27.15 27.35 28.03 28.38 28.48 28.23 28.52 29.16
Etch rate (um/min) 1.95 2.2 2.36 2.5 2.47 2.49 2.55 2.58 2.59 2.57 2.59 2.65
Etch rate (nm/cyc) 143 161 173 183 181 182 187 189 190 188 190 194
Sidewall bowing (%) 0.4 0.4 0.3 -0.3 -0.1 -0.6 -0.6 -0.7 -0.5 -1 -0.3 -1.2
Sidewall angle (degs) 90.95 91.1 91.34 91.44 91.19 91.14 91.35 91.86 91.65 92.32 91.7 92.54
Bottom bowing (%) 13.55 16.66 16.02 14.8 13.59 14.6 8.88 5.86 4.36 2.14 1.84 1.96
Aspect ratio 3.66 2.41 1.69 1.09 1.07 1.07 0.56 0.38 0.28 0.14 0.09 0.1



Date Substrate Information Process Information Results
Wafer info Material/ Exposed area Condi- tioning Recipe Wafer ID Comments Picoscope Numbers
27/4-2020 Travka05 wafer, Si / 5% S022327 DREM 2kW RF MU runs nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022328 Resist etch rate: 62 nm/min Process log entry

SEM image: a060 a059 a058 a057 a056 a055 a054 a053 a052 a051 a050 a049
Trench width (um) 2.08 3.1 4.2 6.08 10.22 15.27 25.26 39.7 50.5 99.82 150.09 299.56
Etched depth (um) 22.96 27.05 28.46 31.57 35.48 37.96 40.7 42.39 43.24 44.09 44.54 44.56
Etch rate (um/min) 2.09 2.46 2.59 2.87 3.23 3.45 3.7 3.85 3.93 4.01 4.05 4.05
Etch rate (nm/cyc) 153 180 190 210 237 253 271 283 288 294 297 297
Sidewall bowing (%) 0.1 0.6 0.2 0.6 0.1 0.2 -0.1 0.2 -0.4 -0.3 -0.3 -1.1
Sidewall angle (degs) 90.85 90.98 90.94 91.18 91.45 91.4 91.68 92.02 91.78 92.3 92.53 92.35
Bottom bowing (%) 16.93 14.87 20.32 20.1 19.02 17.6 14.71 13.78 10.7 6.84 4.53 2.34
Aspect ratio 9.5 7.61 6.12 4.71 3.2 2.35 1.54 1.03 0.84 0.43 0.29 0.15

.
27/4-2020 Travka10 wafer, Si / 10% S022328 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022329 Resist etch rate: 60 nm/min Process log entry

SEM image: a061 a062 a063 a064 a065 a066 a067 a068 a069 a070 a071 a072
Trench width (um) 1.78 2.88 4.24 5.78 10.22 15.36 25.48 40.51 75.63 100.86 200.75 299.63
Etched depth (um) 21.26 24.82 27.54 31.1 35.34 38.21 41.17 42.98 44.58 45.15 45.16 44.68
Etch rate (um/min) 1.93 2.26 2.5 2.83 3.21 3.47 3.74 3.91 4.05 4.1 4.11 4.06
Etch rate (nm/cyc) 142 165 184 207 236 255 274 287 297 301 301 298
Sidewall bowing (%) -0.2 0.2 -0.1 0.2 -0.2 -0.4 -0.2 -0.8 -0.6 -0.7 -1.3 -1.4
Sidewall angle (degs) 90.47 90.61 90.35 90.98 90.78 91.08 91.11 91.43 91.97 91.55 92.07 92.37
Bottom bowing (%) 26.03 15.16 18.16 17.1 17.51 17.21 15.48 13.54 8.58 6.93 3.43 2.43
Aspect ratio 10.89 7.92 6.26 4.94 3.31 2.38 1.57 1.04 0.58 0.44 0.22 0.15

.
27/4-2020 Travka20 wafer, Si / 20% S022329 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022330 Resist etch rate: 59 nm/min Process log entry

SEM image: a086 a085 a084 a083 a082 a081 a080 a078 a077 a076 a075 a074 a073
Trench width (um) 1.91 3.04 3.68 5.89 10.08 15.02 40.03 49.99 75.51 100.03 148.99 199.75 298.84
Etched depth (um) 21.58 24.69 26.33 29.81 33.68 36.25 40.32 40.95 41.68 41.77 41.84 42.1 41.82
Etch rate (um/min) 1.96 2.24 2.39 2.71 3.06 3.3 3.67 3.72 3.79 3.8 3.8 3.83 3.8
Etch rate (nm/cyc) 144 165 176 199 225 242 269 273 278 278 279 281 279
Sidewall bowing (%) 0.2 0.4 0.3 0.4 0.4 0.1 -0.1 -0.5 -0.6 -0.5 -0.6 -0.8 -0.3
Sidewall angle (degs) 90.77 90.91 90.93 91.14 91.39 91.49 91.66 91.91 91.96 92.38 92.57 92.96 93.05
Bottom bowing (%) 23.69 15.29 19.28 16.95 17.41 17.41 12.51 11.52 8.37 6.7 4.3 3.23 2.03
Aspect ratio 9.8 7.2 6.42 4.6 3.1 2.28 0.98 0.8 0.54 0.41 0.28 0.21 0.14

.
27/4-2020 Travka35 wafer, Si / 35% S022330 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022331 Resist etch rate: 66 nm/min Process log entry

SEM image: a087 a088 a089 a090 a091 a092 a093 a094 a095 a096 a097
Trench width (um) 1.61 2.71 3.71 7.69 9.87 15.04 25.1 40.03 75.03 199.26 299.66
Etched depth (um) 18.41 22.24 24.41 29.54 31.11 33.55 35.77 37.1 37.96 38.18 38.24
Etch rate (um/min) 1.67 2.02 2.22 2.69 2.83 3.05 3.25 3.37 3.45 3.47 3.48
Etch rate (nm/cyc) 123 148 163 197 207 224 238 247 253 255 255
Sidewall bowing (%) -0.2 0.1 0.1 0.4 0.2 0.1 -0.3 -0.2 -0.5 -1.1 -1.2
Sidewall angle (degs) 90.33 90.75 90.89 91.13 91.07 91.31 91.34 91.69 91.84 92.49 92.44
Bottom bowing (%) 24.26 20.15 19.99 19.05 17.3 16.29 16.68 13.21 7.68 3.61 2.18
Aspect ratio 10.7 7.42 5.99 3.58 2.98 2.13 1.38 0.9 0.5 0.19 0.13

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27/4-2020 Travka50 wafer, Si / 50% S022331 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022332 Resist etch rate: 58 nm/min Process log entry

SEM image: a110 a109 a108 a107 a106 a105 a103 a102 a101 a099 a098
Trench width (um) 1.69 2.57 3.68 7.62 14.53 39.96 49.94 100.08 199.63 298.35 299.12
Etched depth (um) 17.88 20.47 22.58 27.07 30.78 33.82 34.11 34.67 34.66 34.26 34.54
Etch rate (um/min) 1.63 1.86 2.05 2.46 2.8 3.07 3.1 3.15 3.15 3.11 3.14
Etch rate (nm/cyc) 119 136 151 180 205 225 227 231 231 228 230
Sidewall bowing (%) 0.1 0.1 0.1 0.2 0.2 -0.5 -0.3 -0.8 -0.7 -2 -1.5
Sidewall angle (degs) 90.58 90.8 90.9 91.17 91.56 91.68 91.62 92.08 92.15 93.34 92.48
Bottom bowing (%) 24.2 20.91 19.84 16.14 17.61 12.38 10.43 5.77 3.26 1.83 1.96
Aspect ratio 9.58 7.18 5.61 3.32 2.01 0.83 0.67 0.34 0.17 0.11 0.11

.
27/4-2020 Travka65 wafer, Si / 65% S022332 +1min TDESC clean nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes S022333 Resist etch rate: 58 nm/min Process log entry

SEM image: a111 a112 a113 a114 a115 a116 a117 a118 a119 a120 a121 a122 a123 a124
Trench width (um) 2.5 3.42 5.44 7.37 9.37 14.4 24.44 39.54 74.69 100.04 150.41 199.78 299.94 301.31
Etched depth (um) 18.9 20.55 23.1 24.82 26.16 28.28 30.04 31.02 31.45 30.89 31.28 30.52 31.47 31.59
Etch rate (um/min) 1.72 1.87 2.1 2.26 2.38 2.57 2.73 2.82 2.86 2.81 2.84 2.77 2.86 2.87
Etch rate (nm/cyc) 126 137 154 165 174 189 200 207 210 206 209 203 210 211
Sidewall bowing (%) 0 0.1 0.2 0.1 0.2 0.4 0.2 -0.3 -0.7 -1.4 -0.7 -0.8 -0.9 -1
Sidewall angle (degs) 90.75 90.75 90.96 91.03 91.19 91.48 91.42 91.86 91.99 91.88 91.81 92.79 92.54 92.34
Bottom bowing (%) 18.3 18.42 16.33 16.3 16.79 18.16 14.77 11.67 6.69 4.18 3.28 1.66 1.42 1.93
Aspect ratio 6.89 5.58 3.97 3.18 2.64 1.87 1.2 0.77 0.42 0.31 0.21 0.15 0.1 0.1

.
27/4-2020 Travka80 wafer, Si / 80% S022333 + 1min TDESC clean nanolab/ jmli / DREM / DREM 2kW nano, 150 cycles or 11:00 minutes S022334 Resist etch rate: 79 nm/min Process log entry

SEM image: a136 a135 a134 a133 a126 a125 a132 a131 a130 a129 a128 a127
Trench width (um) 5.51 9.61 14.79 24.6 24.8 25.02 49.42 74.63 99.55 199.49 299.49 299.54
Etched depth (um) 21.45 24.21 25.99 27.45 27.15 27.35 28.03 28.38 28.48 28.23 28.52 29.16
Etch rate (um/min) 1.95 2.2 2.36 2.5 2.47 2.49 2.55 2.58 2.59 2.57 2.59 2.65
Etch rate (nm/cyc) 143 161 173 183 181 182 187 189 190 188 190 194
Sidewall bowing (%) 0.4 0.4 0.3 -0.3 -0.1 -0.6 -0.6 -0.7 -0.5 -1 -0.3 -1.2
Sidewall angle (degs) 90.95 91.1 91.34 91.44 91.19 91.14 91.35 91.86 91.65 92.32 91.7 92.54
Bottom bowing (%) 13.55 16.66 16.02 14.8 13.59 14.6 8.88 5.86 4.36 2.14 1.84 1.96
Aspect ratio 3.66 2.41 1.69 1.09 1.07 1.07 0.56 0.38 0.28 0.14 0.09 0.1

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