Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121: Difference between revisions

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<gallery caption="The results of the nano1.2 recipe" widths="250" heights="200" perrow="3">
<gallery caption="The results of the nano1.21 recipe" widths="250" heights="200" perrow="3">
image:WF_2E06_mar23B-030.jpg|The 30 nm trenches
image:WF_2E06_mar23B-030.jpg|The 30 nm trenches
image:WF_2E06_mar23B-060.jpg|The 60 nm trenches
image:WF_2E06_mar23B-060.jpg|The 60 nm trenches

Revision as of 10:46, 13 April 2011

The nano1.21 recipe

Recipe nano1.21
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature -10 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 1925
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask nm zep etched down to 6dgh4 nm