Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
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Looking at the "SIMS Measurement After Drive-in Process at 1050 <sup>o</sup>C" graph, it can be seen that the two curves "Pre-dep at 950 <sup>o</sup>C" and "Pre-dep at 1000 <sup>o</sup>C" are crossing each other, but according to the theory they should not do that. Only one wafer has been measured so there is not that much statistical data to verify it with. | Looking at the "SIMS Measurement After Drive-in Process at 1050 <sup>o</sup>C" graph, it can be seen that the two curves "Pre-dep at 950 <sup>o</sup>C" and "Pre-dep at 1000 <sup>o</sup>C" are crossing each other, but according to the theory they should not do that. Only one wafer has been measured so there is not that much statistical data to verify it with. | ||
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==Test of the Phosphorus Predep furnace== | ==Test of the Phosphorus Predep furnace== | ||