Specific Process Knowledge/Thin film deposition: Difference between revisions
Line 88: | Line 88: | ||
[[/Sputter deposition of oxides and other compounds|YSZ]] (Yttrium stabilized zirconia)<br/> | [[/Sputter deposition of oxides and other compounds|YSZ]] (Yttrium stabilized zirconia)<br/> | ||
[[/Gadolinium Cerium Oxide|Gd<sub>0.2</sub>Ce<sub>0.8</sub>O<sub>2</sub> (GCO)]] | |||
|style="background: LightGray"| | |style="background: LightGray"| |
Revision as of 17:34, 7 February 2024
Feedback to this page: click here
Unless otherwise stated, this page is written by DTU Nanolab internal
Choose material to deposit
Semiconductors | Oxides | Nitrides | Carbon and Carbides | Metals | Alloys | Transparent conductive oxides | Polymers | Multilayers |
Aluminium Oxide (Al2O3)
|
Silicon Nitride - and oxynitride
|
Carbon
|
Aluminium
|
AlCu And an electroceramic: YSZ (Yttrium stabilized zirconia) |
ITO (Tin doped Indium Oxide) |
SU-8 |
Oh no! My material is not on the list! Please contact the Thin Film group if you would like to inquire about a material that is not mentioned here.
Choose deposition equipment
PVD - Physical vapor deposition | LPCVD - low pressure chemical vapor deposition | PECVD - plasma enhanced chemical vapor deposition | ALD - atomic layer deposition | Coaters - for polymers | Others
|
|
|
|
|
See the Lithography/Coaters page for coating polymers |
|