Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions
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==Al2O3 etching by sanvis@nanolab== | ==Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab== | ||
*[[Media:Alumina etch information.pptx|Presentation made by Sanvis @DTU Nanolab, click to view]] | *[[Media:Alumina etch information.pptx|Presentation made by Sanvis @DTU Nanolab, click to view]] | ||
Revision as of 11:38, 30 January 2024
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Al2O3 etching with the ICP metal
| Parameter | Recipe name: no name (testing recipe) |
|---|---|
| Coil Power [W] | 1200 |
| Platen Power [W] | 200 |
| Platen temperature [oC] | 0 |
| BCl3 flow [sccm] | 60 |
| Cl2 flow [sccm] | 30 |
| Pressure [mTorr] | 4 |
| Material to be etched | Etch rate using the above parameters |
|---|---|
| Al2O3 |
|
Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab
| Parameter | Nanoscale Al2O3 etch | Microscale Al2O3 etch |
|---|---|---|
| Coil Power [W] | 300 | 500 |
| Platen Power [W] | 15 | 70 |
| Platen temperature [oC] | 0 | 0 |
| BCl3 flow [sccm] | 20 | 40 |
| Cl2 flow [sccm] | 7 | 15 |
| Pressure [mTorr] | 1.2 | 3.0 |
| Material to be etched | Nanoscale Al2O3 etch | Microscale Al2O3 etch |
|---|---|---|
| Etch rate | 6.25 nm/min on 6" wafer, Summer sanvis@nanolab | 25 nm/min on small samples on Si carrier, Summer 2022 sanvis@nanolab |
Al2O3 etching by bghe@nanolab
Recipes
| Parameter | Recipe 1:Al2O3 etch platen only |
|---|---|
| BCl3 (sccm) | 15 |
| Ar (sccm) | 15 |
| Pressure (mTorr) | 5 |
| Coil power (W) | 0 |
| Platen power (W) | 30 |
| Temperature (oC) | 20 |
| Spacers (mm) | 100 mm |
Results
- Profile view, etch time 40 min, started with 380 nm zep resist
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- Top view after resist strip
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