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Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

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*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_6%22_polysilicon_furnace|Deposition of polysilicon using the 6" polysilicon furnace]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_polysilicon/Deposition_of_polysilicon_using_LPCVD/Standard_recipes,_QC_limits_and_results_for_the_6%22_polysilicon_furnace|Deposition of polysilicon using the 6" polysilicon furnace]]


==Deposition of Silicon using PECVD==
At Nanolab you can also deposit silicon the using PECVD. The deposition temperature is 300 °C. 
* [[/Si deposition using PECVD|Si deposition using PECVD3]]


==Deposition of Silicon using sputter deposition==
==Deposition of Silicon using sputter deposition==


At Nanolab you can sputter silicon the using Wordentec or the Lesker Sputter systems. One of the advantages here is that you can deposit on almost any material you like.  
At Nanolab we can sputter silicon the using Wordentec or the Lesker Sputter systems. One of the advantages of sputtering is that you can deposit on almost any material you like.  


* [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|Si sputter deposition in the Wordentec]]
* [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|Si sputter deposition in the Wordentec]]
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It was previosly possible to sputter Si with our [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300| IonFab 300]]. You can read about the deposition conditions and results from that [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|here]].
It was previosly possible to sputter Si with our [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300| IonFab 300]]. You can read about the deposition conditions and results from that [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si|here]].


==Deposition of Silicon using PECVD==
==Deposition of Silicon using e-beam evaporation==
 
It is possible to e-beam evaporate silicon at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]). As with sputtering you can deposit on almost any material, and in the case of e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer.
At Nanolab you can also deposit silicon the using PECVD. The deposition temperature is 300 °C. 
 
* [[/Si deposition using PECVD|Si deposition using PECVD3]]


==Comparison of the methods for deposition of Silicon==
==Comparison of the methods for deposition of Silicon==
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! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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| Sputter deposition of Si.  
| Sputter deposition of Si.  
| Sputter deposition of Si.  
| Sputter deposition of Si.  
| E-beam evaporation of Si.
|-
|-


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|Yes, B (boron) and P (phosphorus)
|Yes, B (boron) and P (phosphorus)
|Yes, B and P
|Yes, B and P
|None
|None
|None
|None
|None
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|RF Ar clean available
|RF Ar clean available
|RF Ar clean available
|RF Ar clean available
|None
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|few nm to >200 nm  
|few nm to >200 nm  
|few nm to ?
|few nm to ?
|few nm to 100 nm *
|-
|-


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| Depends on process parameters, roughly 0.2-2 Å/s. See Process Log.
| Depends on process parameters, roughly 0.2-2 Å/s. See Process Log.
|Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|Depends on process parameters, at least 0.3 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
| 1 Å/s
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|560 °C (amorphous) and 620 °C (poly)
|560 °C (amorphous) and 620 °C (poly)
|300 °C
|300 °C
|Wafers can be heated to 400 °C  
|room temperature
|Wafers can be heated to 600 °C  
|room temperature to 600 °C  
 
|room temperature to 250 °C  
|-
|-


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|Medium
|Medium
|Medium - may be possible to improve using HIPIMS
|Medium - may be possible to improve using HIPIMS
|no step coverage unless using tilt holder, in which case the step coverage can be very good and can be tuned.
|-
|-


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|Good for fused silica, silicon oxide, silicon nitride, silicon
|Good for fused silica, silicon oxide, silicon nitride, silicon
|Not tested, but do not deposit on top of silicon
|Not tested, but do not deposit on top of silicon
| 
| 
| 
| 
| 
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*Up to 10x6" or 4" wafers
*Up to 10x6" or 4" wafers
*many smaller pieces
*many smaller pieces
|
*Up to 4 x 6" wafer or
*3x 8" wafers (ask for special holder)
*Many smaller pieces


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|
|
* Almost any that does not degas, see cross-contamination sheet
* Almost any that does not degas, see cross-contamination sheet
|
*Almost any that does not degas, see cross-contamination sheets
|
|
*Almost any that does not degas, see cross-contamination sheets
*Almost any that does not degas, see cross-contamination sheets
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|
|
*Almost any that does not degas, see the cross-contamination sheets
*Almost any that does not degas, see the cross-contamination sheets
|
*Almost any that does not degas, see cross-contamination sheet
|-
|-


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|Only in PECVD3
|Only in PECVD3
|  
|  
|
|
|
|  
|  
|}
|}
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