Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions

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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation and sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]])
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion bombardment
|Ar ion gun (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|
|
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5 Å/s to 10 Å/s
|1 Å/s to 10 Å/s
|10 Å/s to 15 Å/s (e-beam)
|1 Å/s to 10 Å/s (e-beam)
Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log.
Sputtering: Depends on process parameters. See [[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Sputtering of Cr in Wordentec|here]] and process log.
|1 Å/s
|1 Å/s
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates
! Allowed materials
|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
 
* Pyrex wafers
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet].
|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Quartz wafers
 
* Pyrex wafers
|
|
* III-V materials
* Silicon wafers  
* Silicon wafers  
* Quartz wafers
* and almost any
* Pyrex wafers
|
|
* Silicon wafers
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* and almost any other. Special carrier for III-V materials.
* Special carrier for III-V materials.
|
 
*Silicon wafers
*And almost any that does not degas. Special carrier for III-V materials.  
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
* Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
* Silicon
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
|
* almost any, see [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
|
*Almost any - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|-
|-style="background:LightGrey;  color:black"
! Comment
! Comment
| Takes approx. 20 min to pump down
| Takes approx. 20 min to pump down
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|}  
|}  
'''*''' ''For thicknesses above 600 nm, request permission from metal@nanolab.dtu.dk to ensure there is enough material.''
'''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.''

Revision as of 14:23, 19 January 2024

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Unless otherwise stated, this page is written by DTU Nanolab internal

Studies of Cr deposition processes

Uniformity of Cr layers - Uniformity of Cr layers deposited with different methods and settings

Sputtering of Cr in Wordentec - Settings and deposition rates

Sputtering of Cr in Sputter system (Lesker) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Oxide (PC1) - Settings and deposition rates

Sputtering of Cr in Sputter-system Metal-Nitride (PC3) - Settings and deposition rates

Thermal evaporation of Cr in Thermal evaporator - Settings and deposition results

Stress in sputtered Cr films - Extremely high tensile stress in Cr films deposited at high temperature


Chromium deposition

Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment. Further down you will find the results of some studies on chromium deposition.

E-beam evaporation E-beam evaporation (E-beam evaporator (Temescal) and E-beam evaporator (10-pockets)) E-beam evaporation and sputter deposition (Wordentec) Thermal evaporation (Thermal evaporator) Sputter deposition (Lesker sputterer) Sputter deposition ((Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) )
General description E-beam deposition of Chromium E-beam and sputter deposition of Chromium Thermal deposition of Chromium Sputter deposition of Chromium Sputter deposition of Chromium
Pre-clean Ar ion gun (only in E-beam evaporator Temescal) RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm* 80 nm at least up to 200 nm at least up to 200 nm
Deposition rate 1 Å/s to 10 Å/s 1 Å/s to 10 Å/s (e-beam)

Sputtering: Depends on process parameters. See here and process log.

1 Å/s Depends on process parameters. At least up to 1.48 Å/s. See process log. Depends on process parameters.
Batch size
  • 4x6" wafers or
  • 3x8" wafers (ask for holder)
  • Many smaller pieces
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
  • 4x 2" wafer or
  • 1x 4" wafers or
  • 1x6" wafer or
  • Several smaller pieces
  • In theory up to 8" wafer (or 2x4" wafer) but uniformity will be bad
  • 1x6" wafers
  • Smaller pieces/wafers
  • up to 10x4" wafers or
  • up to 10x6" wafers or
  • many smaller samples
Allowed materials

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

Almost any that does not degas. See the cross-contamination sheet.

  • Silicon wafers
  • and almost any
  • Almost that does not degas - see cross contamination sheets for PC1 and PC3
  • Special carrier for III-V materials.
Comment Takes approx. 20 min to pump down Takes approx. 1 hour to pump down Takes approx. 20 min to pump down Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber

* For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material.

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