Specific Process Knowledge/Lithography/Development

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Development Comparison Table

Equipment		Developer: SU8 (Wet bench)	Developer: E-beam	Developer: TMAH Manual	Developer: TMAH UV-lithography	Developer: TMAH Stepper
Purpose		Development of: SU-8	Development of: ZEP 520A AR-P 6200.xx (CSAR)	Development of: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists	Development of: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists Post-exposure baking	Development of: DUV resists Post-exposure baking
Developer		mr-Dev 600 (PGMEA)	ZED N-50 AR-600-546	AZ 726 MIF (2.38% TMAH in water)	AZ 726 MIF (2.38% TMAH in water)	AZ 726 MIF (2.38% TMAH in water)
Method	Development	Submersion	Spray/Puddle	Puddle	Puddle	Puddle
	Handling	Single wafer carrier Chip bucket 100 mm carrier for up to 6 wafers	Vacuum chuck for 100 mm & 150 mm substrates Chip chuck for chips & 2" substrates	Vacuum chuck for 100 mm & 150 mm substrates Chip chuck for chips & 2" substrates	Vacuum chuck	Vacuum chuck
Process parameters	Temperature	Room temperature	Room temperature	Room temperature	Room temperature	Room temperature
	Agitation	Magnetic stirrer	Rotation	Rotation	Rotation	Rotation
	Rinse	IPA	IPA	DI water	DI water	DI water
Substrates	Substrate size	Chips 50 mm wafers 100 mm wafers 150 mm wafers 200 mm wafers	Chips (5mm to 2") 50 mm wafers 100 mm wafers 150 mm wafers	Chips (5mm to 2") 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers 200 mm wafers (may require tool change)	100 mm wafers 150 mm wafers 200 mm wafers (may require tool change)
	Allowed materials	Silicon and glass substrates Film or pattern of all but Type IV	All cleanroom approved materials	All cleanroom approved materials Film or pattern of all types	Silicon and glass substrates Film or pattern of all but Type IV	Silicon, III-V, and glass substrates Film or pattern of all but Type IV
	Batch	1 - 6	1	1	1 - 25	1 - 25

Developer: SU8 (Wet Bench)

The Developer: SU8(Wet Bench)is located in E-4 room.

The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA in dedicated IPA bath and put for drying in the empty bath.

The user manual, user APV, and contact information can be found in LabManager: Developer: SU8(Wet Bench) - requires login

Process information

Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.

Development time is strongly dependent on the SU-8 thickness.

• Minimum development time: 1 min per 20 µm in FIRST

Suggestions:

• 2-5µm: 2 min. in FIRST; 2 min. in FINAL
• 40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
• 180-250µm: 15 min. in FIRST; 15 min. in FINAL

Equipment performance and process related parameters

Purpose		Development of: SU-8
Developer		mr-Dev 600 (PGMEA)
Method	Development	Submersion
	Handling	Single wafer holder
Process parameters	Temperature	Room temperature
	Agitation	Magnetic stirrer
	Rinse	IPA
Substrates	Substrate size	100 mm wafers 150 mm wafers, check the liquid level in the baths 200 mm wafer, check the liquid level in the baths
	Allowed materials	Silicon and glass substrates Film, or pattern, of all materials except Type IV
	Batch	1-6

Developer: E-beam

Developer: E-beam is located in E-4

Developer: E-beam is a manually operated, single substrate or chip spray-puddle developer. It uses the N50 or AR 600-546 developers and IPA for rinsing. The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is performed automatically by the equipment.

The machine is setup to agitate and be stationary to enhance the development uniformity - this is a ongoing process.

Training video (for Developer: TMAH Manual, but it is the same model)

The user manual, user APV, and contact information can be found in LabManager - requires login

Process information

All recipes are single puddle. N50 and 546 denotes the developer used (546 is short for AR 600- 546). The first step is pressurizing the canister so nothing will happen visually. Please watch if the developer and rinsing starts. If not try to restart the machine by pressing the EMO and turning it on again. The spray is 8-10 s and will start the development process hence the short recipes (10s and 30s.) have been adjusted according to this.

Process recipes

• 546 10s: 10s. Development Rinse and dry.
• 546 30s: 60s. Development Rinse and dry.
• 546 60s: 60s. Development Rinse and dry.
• 546 180s: 180s. Development Rinse and dry.
• N50 10s: 10s. Development Rinse and dry.
• N50 30s: 30s. Development Rinse and dry.
• N50 60s: 60s. Development Rinse and dry.
• N50 90s: 90s. Development Rinse and dry.
• N50 120s: 120s. Development Rinse and dry.
• N50 180s: 180s. Development Rinse and dry.
• N50 300s: 300s. Development Rinse and dry.
• N50 180s6": Test for changing the agitation for 6" uniformity 180s. Development Rinse and dry.
• Testdev: The time can be modified 60s. Development Rinse and dry on AR 600-546.
• Rinse: Rinse and dry.

Utility recipes

• UTIL-DR: Dome rinse.
• UTIL-BE: Bottle empty. Nanolab use only.

Equipment performance and process related parameters

Purpose		Development of: CSAR ZEP520A
Developer		AR 600 - 546 (developer X AR 600-54/6) used for CSAR 6200 series resists ZED N-50 used for Zep520A resists
Method	Development	Spray/Puddle
	Handling	Vacuum chuck for 100 mm or 150 mm wafers Chip chick for chips and 2" wafers
Process parameters	Temperature	Room temperature
	Agitation	Rotational agitation at 15 rpm
	Rinse	IPA
Substrates	Substrate size	Chips (6-60 mm) 2" wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom approved materials Film, or pattern, of all materials except Type IV
	Batch	1

Developer: TMAH Manual

Developer: TMAH Manual is located in E-4

Developer: TMAH Manual is a manually operated, single substrate or chip puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment.

Training video

The user manual, user APV, and contact information can be found in LabManager - requires login

Process information

All recipes use the following structure:

1. Pressurize the TMAH canister
2. Dispense puddle while rotating substrate slowly
3. Puddle development while not rotating
4. Agitate substrate once per 30 seconds by rotating slowly for 1 second
5. Spin off developer
6. Clean substrate and chamber with DI water
7. Dry substrate and chamber with nitrogen

Multi-puddle recipes repeat steps 2-5 for the given number of puddles.

Process recipes
SP: Single-puddle
MP: Multi-puddle

• 1 Rinse
• 2 SP 15s
• 3 SP 30s
• 4 SP 60s
• 5 SP 90s
• 6 SP 120s
• 7 MP 2x60 s
• 8 MP 4x60 s
• 9 MP 6x60 s

Equipment performance and process related parameters

Purpose		Development of UV resists: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 Development of DUV resists: KRF M230Y KRF M35G
Developer		AZ 726 MIF (2.38% TMAH in water)
Method	Development	Puddle
	Handling	Edge handling chuck for 100 mm and 150 mm wafers Vacuum chuck for 100 mm and 150 mm wafers Chip chuck for chips and 2" wafers
Process parameters	Temperature	Room temperature
	Agitation	1 per 30 seconds: Slow rotation of substrate for 1 second
	Rinse	DI water
Substrates	Substrate size	Chips (6-60 mm) 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom approved materials Film, or pattern, of all materials except Type IV
	Batch size	1

Developer TMAH UV-lithography

Developer: TMAH UV-lithography is located in E-4

Developer TMAH UV-lithography was released Q4 2014.

Training video

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

• General process information
• Process recommendations
• Standard processes

Equipment performance and process related parameters

Purpose		Development of AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists
Developer		AZ 726 MIF (2.38% TMAH in water)
Method	Development	Puddle
	Handling	Vacuum chuck
Process parameters	Temperature	Room temperature
	Agitation	Rotation
	Rinse	DI water
Substrates	Substrate size	100 mm wafers 150 mm wafers
	Allowed materials	Silicon and glass substrates Film or pattern of all except Type IV
	Batch	1-25

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Developer: TMAH UV-lithography

The Developer: TMAH Stepper is placed in F-3.

Tool description
This developer is dedicated for development of DUV resists. The developer is fully automatic and can run 1-25 substrates in a single batch. Supported substrate sizes are 100 mm, 150 mm and 200 mm (200 mm requires tool change). The machine is equipped with 1 developer line with 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with DI water, 1 backside rinse line with DI water and 1 Nitrogen line for drying.

The developer dispense, puddle time, agitation, rinse and drying is controlled by the tool.

Product:	Süss MicroTec Gamma 2M developer
Year of purchase:	2013
Location:	Cleanroom F-3

User manual
The user manual and contact information can be found in LabManager - requires login

Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
The tool training video is part of the online tool training, but can also be viewed here.

Equipment performance and process related parameters

Tool purpose	Development of DUV resists: KrF M230Y KrF M35G May also be used for development of: AZ nLOF 2020 AZ MIR 701 AZ 5214E AZ 4562
Developer	AZ 726 MIF (2.38% TMAH)
Development method	Puddle
Handling method	Vacuum chuck for 100 mm & 150 mm wafers Vacuum chuck for 200 mm wafers (requires tool change)
Process temperature	Room temperature
Process agitation	1 cycles per 30 seconds
Process rinse	DI water
Substrate sizes	100 mm wafers 150 mm wafers 200 mm wafers (requires tool change)
Substrate materials	Silicon, III-V or glass substrates Film, or pattern, of all materials except Type IV
Substrate batch size	1-25
Media flow rates	AZ 726 MIF (TMAH): 500 ml/min Topside rinse DI water: 350 ml/min (with BSR+CR active) Backside rinse DI water: 45 ml/min (with TSR+CR active) Process Nitrogen: 50 l/min

Process information

The SEM picture of 250 nm pillars and lines. Exposure dose is 140 J/m2.

Processing on Developer TMAH stepper consists of the following steps:

• Post-exposure bake
• Puddle development
• Rinse

Features of Developer TMAH stepper:

• Cassette-to-cassette wafer handling
• In-line hotplates
• In-line cool plate
• Puddle developer module with rinse and dry

The development process will be performed by the customer together with the Lithography group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.

Here you can find a chart‎ demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.

Post-exposure baking

Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, is carried out on one of the two hotplates. After baking, the wafer is cooled for 20 seconds on the 20°C cool plate.

Puddle Development

Development on Developer TMAH stepper is divided into the following steps:

• Pre-wet
• Puddle dispense
• Development
• Spin-off

Pre-wet may be done using developer or DI water, or it may be skipped. It consists of a short dispense at medium spin speed (2s @ 1200 rpm).

Puddle dispense is done by dispensing developer (AZ 726 MIF) to the center of the wafer in order to build up a puddle of developer on the wafer. During the dispense, the wafer may be stopped or rotating slowly (30 rpm). The developer is dispensed at a rate of approximately 500 ml/min.

Development is carried out by leaving the developer puddle on the wafer for the duration of the development time (puddle time). The rotation is stopped during the development, but the developer may be agitated by rotating the wafer a few turns at low speed, e.g. 2s @ 30 rpm halfway through the development time, in order to facilitate good uniformity.

Spin-off is designed to stop the development by removing the developer from the wafer before the rinse. It is usually carried out as a short spin at high speed (3s @ 4000 rpm), but may be omitted.

Processes are divided into single puddle (SP), double puddle (DP), and multiple puddle (MP).

Rinse

After development, the substrate is rinsed using DI water, and dried using nitrogen.

The standard rinse and dry procedure is 30s at 4000 rpm with DIW being administered from the top at the center of the substrate, followed by a 10-15s dry at 3000 rpm using nitrogen from the top at the center of the substrate. The top side rinse is at a rate of approximately 350 ml/min. The flow rate of the nitrogen is 50 l/min, and the drying time is set according to the size of the substrate.

Standard Processes

NB: The list of standard processes is not necessarily complete, as new processes are added over time.

Development (only)

Development sequences on Developer TMAH stepper are divided into the following steps: Pre-wet, puddle dispense, development, spin-off, and finally rinse and dry.

Single puddle:

• 1004 DCH DEV 60s
• 1104 DCH 100mm SP 60s
• 1105 DCH 150mm SP 60s
• 1106 DCH 200mm SP 60s

Post-exposure baking (only)

Chemically amplified resists and cross-linking negative resists must be baked after exposure (Post-Exposure Bake, PEB) in order to finish the process initiated by the exposure light:

• (1000) DCH PEB 130C 60s
• (1001) DCH PEB 130C 90s

The baking is done at 130°C followed by a cooling step at 20°C for 20 seconds.

Combined PEB and development

For convenience, the PEB and development function of the machine may be combined in one sequence:

• (1002) DCH PEB_60s and DEV_60s
• (1003) DCH PEB_90s and DEV_60s