Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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 |style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub> (nitrogen): 0-10 slm
+*N<sub>2</sub> (nitrogen): 0-10 SLM
-*O<sub>2</sub> (oxygen): 0-10 slm
+*O<sub>2</sub> (oxygen): 0-10 SLM
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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 *1-30 4" wafers (or 2" wafers)
 *1 6" wafer (2 6" wafers with less good uniformity) - Requires training
-*Small samples placed on a 6" dummy wafer - Required traning
+*Small samples placed on a 6" dummy wafer - Requires traning
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed
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 *Silicon and quartz samples with
 **SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>
-**Aluminium
+**Aluminium. Wafers are allowed to enter the furnace after aluminium lift-off or aluminium etch and resist strip in acetone
-**Al<sub>2</sub>O<sub>3</sub> deposited by ALD
+**Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
-*Other materials might be allowed in the furnace, but it requires a permission from the Thin Film group
+*Other materials might be allowed, but it requires a permission from the Thin Film group
+|-
-wafers with aluminium.
-*Silicon wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
-*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
-|-
 |}