Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub> (nitrogen): 0-10 slm
*N<sub>2</sub> (nitrogen): 0-10 SLM
*O<sub>2</sub> (oxygen): 0-10 slm
*O<sub>2</sub> (oxygen): 0-10 SLM
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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*1-30 4" wafers (or 2" wafers)  
*1-30 4" wafers (or 2" wafers)  
*1 6" wafer (2 6" wafers with less good uniformity) - Requires training   
*1 6" wafer (2 6" wafers with less good uniformity) - Requires training   
*Small samples placed on a 6" dummy wafer - Required traning
*Small samples placed on a 6" dummy wafer - Requires traning
|-
|-
| style="background:LightGrey; color:black"|Substrate materials allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
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*Silicon and quartz samples with
*Silicon and quartz samples with
**SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>
**SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub>
**Aluminium  
**Aluminium. Wafers are allowed to enter the furnace after aluminium lift-off or aluminium etch and resist strip in acetone
**Al<sub>2</sub>O<sub>3</sub> deposited by ALD
**Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
*Other materials might be allowed in the furnace, but it requires a permission from the Thin Film group
*Other materials might be allowed, but it requires a permission from the Thin Film group
|-
wafers with aluminium.
*Silicon wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
|-  
|}
|}

Revision as of 14:53, 21 November 2023

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Aluminium Anneal furnace (C4)

Aluminium Anneal furnace (C4). Positioned in cleanroom B-1. /Photo: DTU Nanolab internal

The Aluminium Anneal or Al-Anneal furnace (C4) is a Tempress horizontal furnace for annealing and oxidation of different samples.

The samples can for instance be silicon and quartz wafers or small samples with aluminium or ALD deposited Al2O3 and TiO2. Other materials might be allowed in the furnace, but this requires a permision from the Thin Film group. Also please check the cross contamination information in LabManager, before you use the furnace.

The furnace is the lowest of the C-stack furnaces positioned in cleanroom B-1. .

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge


Overview of the performance of the Aluminium Anneal furnace and some process related parameters

Purpose
  • Annealing in N2
  • Dry oxidation with O2
Process parameter range Process Temperature
  • Normally 350-500 oC for wafers and samples with aluminium
  • Up to 1150 oC for wafers and samples with other materials
Process pressure
  • 1 atm (no vacuum)
Gas flows
  • N2 (nitrogen): 0-10 SLM
  • O2 (oxygen): 0-10 SLM
Substrates Batch size
  • 1-30 4" wafers (or 2" wafers)
  • 1 6" wafer (2 6" wafers with less good uniformity) - Requires training
  • Small samples placed on a 6" dummy wafer - Requires traning
Substrate materials allowed
  • Silicon and quartz samples with
    • SiO2 and Si3N4
    • Aluminium. Wafers are allowed to enter the furnace after aluminium lift-off or aluminium etch and resist strip in acetone
    • Al2O3 and TiO2 deposited by ALD
  • Other materials might be allowed, but it requires a permission from the Thin Film group
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