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Describing a process recipe on the Pegasus may sometimes be difficult because of the great flexibility of the instrument. A compact and precise notation is therefore required for the recipes. Click [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Notation|'''HERE''']] to find a short description.
Describing a process recipe on the Pegasus may sometimes be difficult because of the great flexibility of the instrument. A compact and precise notation is therefore required for the recipes. Click [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Notation|'''HERE''']] to find a short description.
==Comparison of SEM's in building 346/451==
{| border="2" cellspacing="0" cellpadding="0"
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
<i>Under installation (August 2023)</i>
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]]
<!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]]-->
|-
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Model
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP
|style="background:WhiteSmoke; color:black" align="center"| SEM Tabletop 1
<!--|style="background:WhiteSmoke; color:black" align="center"| FEI Quanta 200 3D-->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Purpose
|style="background:LightGrey; color:black" align="center" | Imaging and measurement of
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
<!--|style="background:WhiteSmoke; color:black"|
* Conductive samples-->
|-
|style="background:LightGrey; color:black" align="center" |Other purpose
|style="background:WhiteSmoke; color:black"| <!-- comment -->
|style="background:WhiteSmoke; color:black"|
* Surface material analysis using EDX
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|-
!style="background:silver; color:black;" align="center" width="60"|Instrument location
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Basement of building 346
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Nanolab in building 346
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Nanolab in building 346
|style="background:WhiteSmoke; color:black"|
*Building 451 - room 913
(in the North-East corner of the building's basement)
<!--|style="background:WhiteSmoke; color:black"|
*DTU CEN-->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black" rowspan="2" align="center" |Resolution
|style="background:Whitesmoke; color:black" colspan="5" align="center"| The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
|-
|style="background:WhiteSmoke; color:black"|
* 1-2 nm (limited by vibrations)
|style="background:WhiteSmoke; color:black"|
* 1-2 nm (limited by vibrations)
|style="background:WhiteSmoke; color:black"|
* 1-2 nm (limited by vibrations)
<!--|style="background:WhiteSmoke; color:black"|
* ~3.5 nm (limited by instrument)-->
|style="background:WhiteSmoke; color:black"|
* ~25 nm (limited by instrument)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics
|style="background:LightGrey; color:black" align="center" |Detectors
|style="background:WhiteSmoke; color:black"|
* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
* 4 Quadrant Backscatter electron (QBSD)
* Variable pressure secondary electron (VPSE)
|style="background:WhiteSmoke; color:black"|
* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
* 4 Quadrant Backscatter electron (QBSD)
* Variable pressure secondary electron (VPSE)
|style="background:WhiteSmoke; color:black"|
* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
* High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
* Variable pressure secondary electron (VPSE)
<!--|style="background:WhiteSmoke; color:black"|
* Secondary electron (Everhart-Thornley (ETD))
* Backscatter electron (BSD) - Add-on
* Large Field Detector (LFD) - Add-on
* CCD camera -->
|style="background:WhiteSmoke; color:black"|
* Secondary electron (SE)
* Backscatter electron (BSE)
|-
|style="background:LightGrey; color:black" align="center" |Stage
|style="background:WhiteSmoke; color:black"|
* X, Y: 130 &times; 130 mm
* T: -4 to 70<sup>o</sup>
* R: 360<sup>o</sup>
* Z: 50 mm
|style="background:WhiteSmoke; color:black"|
* X, Y: 150 &times; 150 mm
* T: -10 to 70<sup>o</sup>
* R: 360<sup>o</sup>
* Z: 50 mm
|style="background:WhiteSmoke; color:black"|
* X, Y: 130 &times; 130 mm
* T: -4 to 70<sup>o</sup>
* R: 360<sup>o</sup>
* Z: 50 mm
|style="background:WhiteSmoke; color:black"|
* X, Y: 35 mm
* T: No tilt
* R: No rotation
* Z: 0 mm
|-
|style="background:LightGrey; color:black" align="center" |Electron source
|style="background:Whitesmoke; color:black" colspan="4" align="center"| FEG (Field Emission Gun) source
|style="background:WhiteSmoke; color:black"|
* Thermionic tungsten filament
<!--|style="background:WhiteSmoke; color:black"|
* Tungsten filament-->
|-
|style="background:LightGrey; color:black" align="center" |Operating pressures
|style="background:WhiteSmoke; color:black"|
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Variable at Low vacuum (0.1 mbar-2 mbar)
|style="background:WhiteSmoke; color:black"|
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Variable at Low vacuum (0.1 mbar-2 mbar)
|style="background:WhiteSmoke; color:black"|
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Variable at Low vacuum (0.1 mbar-2 mbar)
|style="background:WhiteSmoke; color:black"|
* Conductor vacuum mode: 5 Pa
* Standard vacuum mode: 30 Pa
* Charge-up reduction vacuum mode: 50 Pa
<!--|style="background:WhiteSmoke; color:black"|
* High vacuum and Low vacuum-->
|-
|style="background:LightGrey; color:black" align="center" |Options
|style="background:WhiteSmoke; color:black"|
* All software options available
* Electron magnetic noise cancellations system
|style="background:WhiteSmoke; color:black"|
* Antivibration platform
* Fjeld M-200 airlock taking up to 8" wafers
* Oxford Instruments X-Max<sup>N</sup> 50 mm<sup>2</sup> SDD EDX detector and AZtec software package
|style="background:WhiteSmoke; color:black"|
*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
|style="background:WhiteSmoke; color:black"|
<!--|style="background:WhiteSmoke; color:black"|
* Focused ion beam (FIB) (Ga<sup>+</sup> ions)-->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3" align="center" |Substrates
|style="background:LightGrey; color:black" align="center" |Sample sizes
|style="background:WhiteSmoke; color:black"|
* Up to 6" wafer with full view
|style="background:WhiteSmoke; color:black"|
* Up to 8" wafer with 6" view
|style="background:WhiteSmoke; color:black"|
*  Up to 6" wafer with full view
|style="background:WhiteSmoke; color:black"|
*  Up to 6" wafer with full view
|style="background:WhiteSmoke; color:black"|
*  Up to 70 mm with full wiew
<!--|style="background:WhiteSmoke; color:black"|
* Wafers won´t fit without a proper holder. The height of the sample is critical, should be as small, as possible-->
|-
| style="background:LightGrey; color:black" align="center" |Allowed materials
|style="background:WhiteSmoke; color:black"|
* Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
|style="background:WhiteSmoke; color:black"|
* Any standard cleanroom materials
|style="background:WhiteSmoke; color:black"|
* Any standard cleanroom materials
|style="background:WhiteSmoke; color:black"|
* Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
* Some biological samples (ask for permission)
<!--|style="background:WhiteSmoke; color:black"|
* Conductive materials
* No biological samples-->
|-
|}
<br clear="all" />


===Hardware changes===
===Hardware changes===