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Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/Mix-and-match click here]'''
Content and illustration by Thomas Pedersen, DTU Nanolab unless otherwise noted.
Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.
Mix-and-match lithography is a process in which two lithography processes are combined to produce a pattern in a single resist layer. In this way one can for instance combine the high resolution of E-beam lithography with the high speed of UV lithography. Other combinations using DUV are also possible.


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The two different methods for pattern alignment. Image: Thomas Pedersen.
The two different methods for pattern alignment.  
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250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500. Image: Thomas Pedersen.
250 nm nLOF2020 contrast curve from exposure at 100 kV on JEOL 9500.  
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100 nm lines in 1500 nm thick nLOF2020. Image: Thomas Pedersen.
100 nm lines in 1500 nm thick nLOF2020.  
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