Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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*Annealing of wafers with aluminium
Annealing and oxidation of e.g.
*Annealing of wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
*Wafers with aluminium
*Wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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*N<sub>2</sub>: 0-10 slm
*N<sub>2</sub>: 0-10 slm
*O<sub>2</sub>: 0-10 slm
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*1-30 100 mm wafers (or 50 mm wafers)  
*1-30 4" mm wafers (or 2" mm wafers)  
*1 6" mm wafer
*Small samples placed on a 6" dummy wafer
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| style="background:LightGrey; color:black"|Substrate materials allowed
| style="background:LightGrey; color:black"|Substrate materials allowed

Revision as of 12:28, 9 November 2023

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Aluminium Anneal furnace (C4)

Aluminium Anneal furnace (C4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing and oxidation of e.g. silicon wafers with aluminium or ALD oxides Al2O3 and TiO2.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom B-1. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager, before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge


Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose

Annealing and oxidation of e.g.

  • Wafers with aluminium
  • Wafers with Al2O3 and TiO2 deposited by ALD
Process parameter range Process Temperature
  • Normally 350-550 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 0-10 slm
  • O2: 0-10 slm
Substrates Batch size
  • 1-30 4" mm wafers (or 2" mm wafers)
  • 1 6" mm wafer
  • Small samples placed on a 6" dummy wafer
Substrate materials allowed
  • Silicon wafers with aluminium.
  • Silicon wafers with Al2O3 and TiO2 deposited by ALD
  • Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
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