Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

@@ Line 29: / Line 29: @@
 |style="background:WhiteSmoke; color:black"|
-*Annealing of wafers with aluminium
+Annealing and oxidation of e.g.
-*Annealing of wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
+*Wafers with aluminium
+*Wafers with Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> deposited by ALD
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
@@ Line 44: / Line 45: @@
 |style="background:WhiteSmoke; color:black"|
 *N<sub>2</sub>: 0-10 slm
+*O<sub>2</sub>: 0-10 slm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 100 mm wafers (or 50 mm wafers)
+*1-30 4" mm wafers (or 2" mm wafers)
+*1 6" mm wafer
+*Small samples placed on a 6" dummy wafer
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed