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Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions

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*Chips on carrier
*Chips on carrier
*100 mm or 150 mm wafers
*50 mm, 100 mm or 150 mm wafers
|style="background:WhiteSmoke; color:black;" align="left"| '''Small samples''' must be '''placed''' on '''dedicated carrier wafers'''. These '''do not need to and should not be''' bonded to the carriers.
|style="background:WhiteSmoke; color:black;" align="left"| '''Small samples''' must be '''placed''' on '''dedicated carrier wafers/susceptors'''. These '''do not need to and should not be''' bonded to the carriers.
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| style="background:Silver; color:black"|Allowed materials
| style="background:Silver; color:black"|Allowed materials
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*Silicon
*Silicon
*Silicon Nitride
*Silicon oxides and nitrides
*Aluminum Oxide
*Quartz
*Metals - ask for permisson
*III-V materials - '''these cannot be heated above 450 °C,''' otherwise it can lead to outgassing of toxic gases. For that reason, '''III-V samples are limited to a maximum process temperature of  440 °C.'''
|style="background:WhiteSmoke; color:black;" align="left"| During previous testing, '''silicon nitride''' and '''aluminum oxide''' were only used as '''coating/masking materials''' and have been proven capable of sustaining this type of high temperature processing.
|style="background:WhiteSmoke; color:black;" align="left"| During previous testing, '''silicon nitride''' and '''aluminum oxide''' were only used as '''coating/masking materials''' and have been proven capable of sustaining this type of high temperature processing.
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