Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions
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===Contrast curve=== | ===Contrast curve=== | ||
A contrast curve is generated using the parameters described above. The contrast is estimated to be 0.75. The low contrast will limit the possibility of using it for dense and low CD geometry. | A contrast curve is generated using the parameters described above. The contrast is estimated to be 0.75. The low contrast will limit the possibility of using it for dense and low CD geometry. | ||
===Example images=== | ===Example images=== | ||
The pattern is written at 6 nA with 10 nm beam pitch, i.e. a fairly high beam pitch in order to accomodate a large dose variation in one sequence. Initial test provides fair definition of lines down to 100 nm, the high line error roughness is most likely from the high beam pitch. A few example images are given below, all from 540 µC/cm<sup>2</sup>. | The pattern is written at 6 nA with 10 nm beam pitch, i.e. a fairly high beam pitch in order to accomodate a large dose variation in one sequence. Initial test provides fair definition of lines down to 100 nm, the high line error roughness is most likely from the high beam pitch. A few example images are given below, all from 540 µC/cm<sup>2</sup>. | ||