Specific Process Knowledge/Lithography/Mix-and-match: Difference between revisions
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Example images from left to right: 100 nm lines (4 µm FOV), 150 nm lines (4 µm FOV), 100 nm vernier scale lines (25 µm FOV), cartoon figures (25 µm FOV). Image: Thomas Pedersen. | Example images from left to right: 100 nm lines (4 µm FOV), 150 nm lines (4 µm FOV), 100 nm vernier scale lines (25 µm FOV), cartoon figures (25 µm FOV). Image: Thomas Pedersen. | ||
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===Example images=== | ===Example images=== | ||
The pattern is written at 6 nA with 10 nm beam pitch, i.e. a fairly high beam pitch in order to accomodate a large dose variation in one sequence. Initial test provides fair definition of lines down to 100 nm, the high line error roughness is most likely from the high beam pitch. A few example images are given below, all from 540 µC/cm<sup>2</sup>. | The pattern is written at 6 nA with 10 nm beam pitch, i.e. a fairly high beam pitch in order to accomodate a large dose variation in one sequence. Initial test provides fair definition of lines down to 100 nm, the high line error roughness is most likely from the high beam pitch. A few example images are given below, all from 540 µC/cm<sup>2</sup>. | ||