Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
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After alignment to the specified alignment marks, the Aligner: Maskless 02 will automatically compensate for the translation (shift) and rotation detected during the alignment. However, the translation is set using only the first alignment mark. This means that if there is any run-out (gain) in the wafer, the alignment will be perfect at the first alignment position, while the second alignment position will be off by the run-out error. The central part of the print will be misaligned by half the run-out error. This is different compared to alignment in a mask aligner, where the user usually splits the run-out error between the two sides, resulting in good alignment in the center. In Aligner: Maskless 02, run-out may be compensated by activating the scaling function, which only becomes available when using 3 or more alignment positions. To help assess whether the measured scaling or shearing is significant, 10 ppm (scaling = 1.000010 or 0.999990; shearing = ±0.010 mRad) corresponds to a difference of 1µm from one edge to the other on a 4" wafer. | After alignment to the specified alignment marks, the Aligner: Maskless 02 will automatically compensate for the translation (shift) and rotation detected during the alignment. However, the translation is set using only the first alignment mark. This means that if there is any run-out (gain) in the wafer, the alignment will be perfect at the first alignment position, while the second alignment position will be off by the run-out error. The central part of the print will be misaligned by half the run-out error. This is different compared to alignment in a mask aligner, where the user usually splits the run-out error between the two sides, resulting in good alignment in the center. In Aligner: Maskless 02, run-out may be compensated by activating the scaling function, which only becomes available when using 3 or more alignment positions. To help assess whether the measured scaling or shearing is significant, 10 ppm (scaling = 1.000010 or 0.999990; shearing = ±0.010 mRad) corresponds to a difference of 1µm from one edge to the other on a 4" wafer. | ||
In order to get good alignment, it is advised to use four alignment marks for alignment, and to activate scaling (possibly also shearing) before starting the exposure. Optical or pneumatic auto-focus should not affect the result, but it is recommended to use the "High Res" camera for the final alignment of each mark in order to achieve the best overlay accuracy. | In order to get good alignment, it is advised to use four alignment marks for alignment, and to activate scaling (possibly also shearing) before starting the exposure. Optical or pneumatic auto-focus should not affect the result, but it is recommended to use the "High Res" camera for the final alignment of each mark in order to achieve the best overlay accuracy. Exposure using the fast mode decreases the overlay accuracy, since the address grid size is increased to 250 nm. | ||
'''Alignment accuracy:''' | '''Alignment accuracy:''' | ||