Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142: Difference between revisions
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Revision as of 10:16, 28 July 2023
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The nano1.42 recipe
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
---|---|---|
Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
Power | 800 W CP, 40 W PP | |
Temperature | -20 degs | |
Hardware | 100 mm Spacers | |
Time | 120 secs | |
Conditions | Run ID | 2017 |
Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
Mask | 211 nm zep etched down to 82 nm |
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The 30 nm trenches
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The 60 nm trenches
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The 90 nm trenches
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The 120 nm trenches
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The 150 nm trenches
Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
Etch rates | nm/min | 148 | 158 | 164 | 167 | 166 | 160 | 8 |
Sidewall angle | degs | 90 | 90 | 90 | 90 | 90 | 90 | 0 |
CD loss | nm/edge | 7 | -7 | -7 | -28 | -28 | -13 | 15 |
CD loss foot | nm/edge | 12 | 5 | 6 | -15 | -1 | 1 | 10 |
Bowing | -1 | 1 | -2 | -5 | -7 | -3 | 3 | |
Bottom curvature | -46 | -30 | -29 | -31 | -27 | -32 | 8 | |
zep | nm/min | 65 | ||||||
Etching SRN (Silicon Rich Nitride) with nano1.42
This test has been done by Leonid Beliaev
- 274nm SRN by LPCVD ("6 inch LS" recipe)
- Substrate: Si/SiO2(1100nm)
- DUV-lithography: KRF M230Y resist 360 nm, Barc 65 nm, exposure dose 220J/m2
- Pattern: Grating with period 400 nm and grating bar width of
- Barc etch in Pegasus 1 at -19 deg, 40s
- Nano 1.42 at -19 deg, 5 min