Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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<gallery caption="EM tests" perrow="3" widths="400px" heights="300px"> | <gallery caption="EM tests" perrow="3" widths="400px" heights="300px"> | ||
File:Contour Plot Y15 EM_0_0.JPG | File:Contour Plot Y15 EM_0_0.JPG| Etch time: 2 min, Average etch rate: 100.2 nm/min, range:+-55.1% | ||
File:Contour Plot Y16 EM_10_30.JPG | File:Contour Plot Y16 EM_10_30.JPG|Etch time: 2 min, Average etch rate: 100.5 nm/min, range:+-32.6% | ||
File:Contour Plot Y27 EM_10_0.JPG | File:Contour Plot Y27 EM_10_0.JPG|Etch time: 2 min, Average etch rate: 100.8 nm/min, range:+-50.8% | ||
File:Contour Plot Y26 EM_0_30.JPG | File:Contour Plot Y26 EM_0_30.JPG|Etch time: 2 min, Average etch rate: 203.8 nm/min, range:+-6.1% | ||
File:Contour Plot Y29 EM_2_30.JPG | File:Contour Plot Y29 EM_2_30.JPG|Etch time: 2 min, Average etch rate: 186.2 nm/min, range:+-3.2% | ||
File:Contour Plot patterned wafer EM_2_30.JPG | File:Contour Plot patterned wafer EM_2_30.JPG Etch time: 6 min, Average etch rate: 223.4 nm/min, range:+-2.3% | ||
</gallery> | </gallery> | ||