Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions
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*One 150 mm wafer | *One 150 mm wafer | ||
*One 100 mm wafer | *One 100 mm wafer | ||
*One or more 50 mm wafers (always placed on a susceptor or | *One or more 50 mm wafers (always placed on a susceptor or carrier wafer) | ||
*One or more small samples (always placed on a susceptor or | *One or more small samples (always placed on a susceptor or carrier wafer) | ||
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|style="background:LightGrey; color:black"|Substrate materials allowed | |style="background:LightGrey; color:black"|Substrate materials allowed | ||
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*Silicon oxide and silicon nitride | *Silicon oxide and silicon nitride | ||
*Fused silica/quartz | *Fused silica/quartz | ||
*III-V materials - Use a dedicated | *III-V materials - Use a dedicated carrier wafer | ||
*Metals - Use a dedicated | *Metals - Use a dedicated carrier wafer and ask for permission | ||
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