Specific Process Knowledge/Thin film deposition: Difference between revisions
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[[/Deposition of Carbon|Carbon]] <br/> | [[/Deposition of Carbon|Carbon]] <br/> | ||
[[/Deposition of Titanium Carbide|Titanium Carbide (TiC)]]<br/> | <!-- [[/Deposition of Titanium Carbide|Titanium Carbide (TiC)]]<br/> --> | ||
[[/Deposition of Silicon Carbide|Silicon Carbide (SiC)]]<br/> | [[/Deposition of Silicon Carbide|Silicon Carbide (SiC)]]<br/> | ||
[[/Sputter deposition of metals and alloys|Tantalum carbide (TaC<sub>x</sub>)]]<br/> | |||
Revision as of 12:59, 23 May 2023
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Choose material to deposit
Semiconductors | Oxides | Nitrides | Carbon and Carbides | Metals | Alloys | Transparent conductive oxides | Polymers | Multilayers |
Aluminium Oxide (Al2O3)
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Silicon Nitride - and oxynitride
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Carbon
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Aluminium
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AlCu And an electroceramic: YSZ (Yttrium stabilized zirconia) |
ITO (Tin doped Indium Oxide) |
SU-8 |
Oh no! My material is not on the list! Please contact the Thin Film group if you would like to inquire about a material that is not mentioned here.
Choose deposition equipment
PVD - Physical vapor deposition | LPCVD - low pressure chemical vapor deposition | PECVD - plasma enhanced chemical vapor deposition | ALD - atomic layer deposition | Coaters - for polymers | Others
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See the Lithography/Coaters page for coating polymers |
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