Revision as of 14:18, 3 January 2011

At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. Allthough PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD1 for deposition of silicon oxides

Recipes

Recipe name	SiH4 flow [sccm]	N $_{2}$ O flow [sccm]	N2 flow [sccm]	B2H6 flow [sccm]	PH3 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1oxide/1ox_std/standard	17	1600	0	0	0	400	380LF	Process control recipe. Developed for waveguides
1PBSG	17	1600	0	135	40	500	800LF	Developed for waveguide top cladding by Haiyan Ou @DTU Photonics
BGE_PBSG	17	1600	0	240	60	500	800LF	Low stress PBSG

Expected results

Recipe name	Deposition rate [µm/min]	RI	Uniformity [%]	Comments
1oxide/1ox_std/standard	~0.193	1.46	2	The latest measured values can be seen in the process control sheet in LabManager
1PBSG	~0.3	1.458@633nm

Recipes on PECVD3 for deposition of silicon oxides

Recipes

Recipe name	SiH4 flow [sccm]	N $_{2}$ O flow [sccm]	N2 flow [sccm]	B2H6 flow [sccm]	PH3 flow [sccm]	Pressure [mTorr]	Power [W]	Description
LFSiO	12	1420	392	0	0	550	60	Uniform silicon oxide
1PBSG	17	1600	0	135	40	500	800LF	BPSG glass for waveguide cladding layer

LF=Low Frequency

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]
LFSiO	~81	~1.48	<1
1PBSG	~228 nm/min	.	~17%

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	At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] page to learn more about the PECVDs at DANCHIP. ~~All though~~ PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.		At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD\|PECVD]] page to learn more about the PECVDs at DANCHIP. Allthough PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.