Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 79: | Line 79: | ||
|N<math>_2</math>O flow [sccm] | |N<math>_2</math>O flow [sccm] | ||
|N2 flow [sccm] | |N2 flow [sccm] | ||
|B2H6 flow [sccm] | |||
|PH3 flow [sccm] | |||
|Pressure [mTorr] | |Pressure [mTorr] | ||
|Power [W] | |Power [W] | ||
| Line 87: | Line 89: | ||
|1420 | |1420 | ||
|392 | |392 | ||
|0 | |||
|0 | |||
|550 | |550 | ||
|60 | |60 | ||
| | |Uniform silicon oxide | ||
|- | |- | ||
|1PBSG | |||
|17 | |||
|1600 | |||
|0 | |||
|135 | |||
|40 | |||
|500 | |||
|800LF | |||
|BPSG glass for waveguide cladding layer | |||
|} | |} | ||
LF=Low Frequency | LF=Low Frequency | ||
===Expected results=== | ===Expected results=== | ||
Revision as of 11:42, 13 December 2010
At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon oxides
Recipes
| Recipe name | SiH4 flow [sccm] | NO flow [sccm] | N2 flow [sccm] | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1oxide/1ox_std/standard | 17 | 1600 | 0 | 0 | 0 | 400 | 380LF | Process control recipe. Developed for waveguides |
| 1PBSG | 17 | 1600 | 0 | 135 | 40 | 500 | 800LF | Developed for waveguide top cladding by Haiyan Ou @DTU Photonics |
| BGE_PBSG | 17 | 1600 | 0 | 240 | 60 | 500 | 800LF | Low stress PBSG |
Expected results
| Recipe name | Deposition rate [µm/min] | RI | Uniformity [%] | Comments |
| 1oxide/1ox_std/standard | ~0.193 | 1.46 | 2 | The latest measured values can be seen in the process control sheet in LabManager |
| 1PBSG | ~0.3 | 1.458@633nm |
Recipes on PECVD3 for deposition of silicon oxides
Recipes
| Recipe name | SiH4 flow [sccm] | NO flow [sccm] | N2 flow [sccm] | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| LFSiO | 12 | 1420 | 392 | 0 | 0 | 550 | 60 | Uniform silicon oxide |
| 1PBSG | 17 | 1600 | 0 | 135 | 40 | 500 | 800LF | BPSG glass for waveguide cladding layer |
LF=Low Frequency
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] |
| LFSiO | ~81 | ~1.48 | <1 |