Jump to content

Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions

Rkch (talk | contribs)
Rkch (talk | contribs)
Line 174: Line 174:


BHF etches SiO<sub>2</sub> and partially removes native oxide on InGaAs and InP. '''Do not use BHF unless you know the dangers involved with this chemical and always use 4H gloves!'''.
BHF etches SiO<sub>2</sub> and partially removes native oxide on InGaAs and InP. '''Do not use BHF unless you know the dangers involved with this chemical and always use 4H gloves!'''.
<!-- copyright issue rkc


{| border="1" style="text-align: center; width: 500px; height: 100px;"
{| border="1" style="text-align: center; width: 500px; height: 100px;"
Line 203: Line 205:
'''(5)''' Appl. Phys. Lett. vol. 51, 2222 (1987).
'''(5)''' Appl. Phys. Lett. vol. 51, 2222 (1987).
<br>
<br>
<br>'''Note:''' neither Physimeca or PECVD2 is available anymore. Use the Temescal and the PECVD3/PECVD4 instead.  
<br>'''Note:''' neither Physimeca or PECVD2 is available anymore. Use the Temescal and the PECVD3/PECVD4 instead.
 
-->


==Citric Acid etch==
==Citric Acid etch==