Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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H<sub>3</sub>PO<sub>4</sub>(85%):H<sub>2</sub>O<sub>2</sub>(30%):H<sub>2</sub>O is a GaAs/AlGaAs-etch which gives a better surface quality than H<sub>2</sub>SO<sub>4</sub>-based etches. | H<sub>3</sub>PO<sub>4</sub>(85%):H<sub>2</sub>O<sub>2</sub>(30%):H<sub>2</sub>O is a GaAs/AlGaAs-etch which gives a better surface quality than H<sub>2</sub>SO<sub>4</sub>-based etches. | ||
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'''(1)''' Temperature of mixture is ~22 degC (no heating during etch). Data is obtained using magnetic stirring with sample on flat basket. '''(2)''' Refrigerated H2O used during mixture of etch, and mixture kept at 17 degC during etch. '''(3)''' 10:2:30 gives smoother etch than 10:2:60. | '''(1)''' Temperature of mixture is ~22 degC (no heating during etch). Data is obtained using magnetic stirring with sample on flat basket. '''(2)''' Refrigerated H2O used during mixture of etch, and mixture kept at 17 degC during etch. '''(3)''' 10:2:30 gives smoother etch than 10:2:60. | ||
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