Specific Process Knowledge/Lithography/Development/DUV developer: Difference between revisions

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===Equipment performance and process related parameters===
===Equipment performance and process related parameters===


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!style="background:silver; color:black;" width="60"|Purpose  
!style="background:silver; color:black;" width="60"|Purpose  

Latest revision as of 11:21, 3 February 2023

Developer: TMAH Stepper

The Developer-TMAH-Stepper is placed in F-3

This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.


The user manual and contact information can be found in LabManager - requires login


Process information

The SEM picture of 250 nm pillars and lines. Exposure dose is 140 J/m2.

The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.

Here you can find a chart‎ demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.

Standard processes

Post-exposure bake sequences:

  • (1000) DCH PEB 130C 60s 60s baking at 130°C; 20s cooling
  • (1001) DCH PEB 130C 90s 90s baking at 130°C; 20s cooling

Development sequences:

  • (1004) DCH DEV 60s 60s single puddle development

Combined PEB and development sequences:

  • (1002) DCH PEB_60s and DEV_60s 60s baking at 130°C followed by 60s single puddle development
  • (1003) DCH PEB_90s and DEV_60s 90s baking at 130°C followed by 60s single puddle development

The standard developer process consists of:

  • pre-wetting with water (2.5s @ 1000rpm)
  • developer dispense (2.5s @ 40rpm, corresponding to ~9ml)
  • development (60s @ 0rpm)
  • water rinse with BSR (5s @ 3000rpm)
  • nitrogen drying (7s @ 4000rpm)

and has a cycle time of ~2 minutes


Equipment performance and process related parameters

Purpose

Development of DUV resist: KRF M230Y and KRF M35G

Developer

2,38% water based TMAH

Process parameters Spin speed

10 - 5000 rpm

Spin acceleration

100 - 10000 rpm/s

Hotplate temperature

130°C for post exposure baking

Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers (requires tool change)
Allowed materials
  • Any standard cleanroom material
Batch

1 - 25


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