Jump to content

Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

← Older editNewer edit →
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,915 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,915 edits
Line 40: Line 40:


Recommended parameters for development of different resists.  
Recommended parameters for development of different resists.  
Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist/UV_Resist|Information on UV exposure dose]]
Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|Information on UV exposure dose]]


*'''2µm AZ nLOF 2020'''
*'''2µm AZ nLOF 2020'''
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing"