Specific Process Knowledge/Lithography/Baking: Difference between revisions
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[[Image:Hotplate90-110C in C-1.jpg|300x300px|thumb|Hotplate: 90-110C located in C-1]] | [[Image:Hotplate90-110C in C-1.jpg|300x300px|thumb|Hotplate: 90-110C located in C-1]] | ||
Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C. | Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C. | ||
The user manual, and contact information can be found in LabManager: | The user manual, and contact information can be found in LabManager: | ||