Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14: Difference between revisions
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== The nano1.4 recipe == | == The nano1.4 recipe == | ||
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Latest revision as of 15:17, 2 February 2023
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The nano1.4 recipe
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
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Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
Power | 800 W CP, 50 W PP | |
Temperature | -20 degs | |
Hardware | 100 mm Spacers | |
Time | 120 secs | |
Conditions | Run ID | 2000 |
Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
Mask | 211 nm zep etched down to 77 nm |
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The 30 nm trenches
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The 60 nm trenches
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The 90 nm trenches
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The 120 nm trenches
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The 150 nm trenches
Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
Etch rates | nm/min | 168 | 182 | 185 | 189 | 191 | 183 | 9 |
Sidewall angle | degs | 91 | 91 | 91 | 91 | 90 | 91 | 0 |
CD loss | nm/edge | 7 | -3 | -3 | -25 | -26 | -10 | 15 |
CD loss foot | nm/edge | 12 | 9 | 10 | -11 | 1 | 4 | 9 |
Bowing | 9 | 6 | 4 | 5 | 7 | 6 | 2 | |
Bottom curvature | -47 | -34 | -34 | -26 | -19 | -32 | 10 | |
zep | nm/min | 67 | ||||||