Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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*Spin-off | *Spin-off | ||
*Backside rinse using PGMEA | *Backside rinse using PGMEA | ||
The wafer is first centered on the spindle chuck and held in place by vacuum. If static dispense is specified in the process, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist is dispensed through the dispense arm, positioned over the center of the wafer. The resist pump administers a volume of resist which depends on the substrate size. | The wafer is first centered on the spindle chuck and held in place by vacuum. If static dispense is specified in the process, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist is dispensed through the dispense arm, positioned over the center of the wafer. The resist pump administers a volume of resist which depends on the substrate size. | ||