Specific Process Knowledge/Thermal Process/Jipelec RTP

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Jipelec - Rapid Thermal Processing

Jipelec RTP: Positioned in cleanroom A-4/ Photo: DTU Nanolab internal

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).

The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1100 oC (only short time a the high temperatures - see the user manual) III-V materials only to 450 oC Temperature ramp up to 50 oC/min
	Process pressure	1 atm Vacuum
	Gases on the system	N2
Substrates	Batch size	One 50 mm or 100 mm wafer Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide on the back)
	Substrate materials allowed	A carrier is always needed: For III-V materials and metals a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used Silicon Silicon oxide Silicon nitride Fused silica/quartz Polysilicon III-V materials (on graphite carrier, max 450 oC) Some metals - (on graphite carrier). Ask the Thin Film group for permission