Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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[[Category: Equipment |Thermal Noble]]
[[Category: Equipment |Thermal Noble]]
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Please check the cross contamination information in LabManager before you use the furnace.  
Please check the cross contamination information in LabManager before you use the furnace.  


[[Image:Noble.JPG|thumb|300x300px|Noble furnace. Positioned in service area Cx1]]
[[Image:Noble.JPG|thumb|300x300px|Noble furnace. Positioned in service area Cx1/ Photo: DTU Nanolab internal]]


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''

Latest revision as of 12:18, 2 February 2023

Feedback to this page: click here

This page is written by DTU Nanolab internal

EXPIRED!!! The Noble furnace has been removed from the cleanroom January 2020.

Noble furnace

The Noble Furnace is used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. A bubbler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 oC.

In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples (placed on a Si carrier wafer).

The furnace is located in service area Cx1.

Please check the cross contamination information in LabManager before you use the furnace.

Noble furnace. Positioned in service area Cx1/ Photo: DTU Nanolab internal

The user manual, technical information and contact information can be found in LabManager:

Noble furnace

Overview of the performance of the Noble Furnace

Purpose
  • Oxidation
  • Annealing

Oxidation:

  • Dry
  • Wet (with bubbler. Water steam + N2)

Annealing:

  • N2
  • Ar
Process parameter range Process Temperature
  • Up to 1000 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2: 0-5 SLM
  • O2: 0-5 SLM
  • Ar: 0-7 SLM
Substrates Batch size
  • 1-25 100 mm wafers (or 50 mm wafers) per run
  • A number of smaller samples (placed on a Si carrier wafer)
Substrate material allowed
  • Silicon samples
  • Silicon samples with metals
  • Silicon sample with polymers (only approved materials)