Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

From LabAdviser
No edit summary
No edit summary
Line 24: Line 24:
|400
|400
|380LF
|380LF
|Developed for waveguides  
|Process control recipe. Developed for waveguides  
|-
|-
|1PBSG
|1PBSG
Line 39: Line 39:


===Expected results===
===Expected results===
{| border="1" cellspacing="0" cellpadding="6"
{| border="1" cellspacing="0" cellpadding="5"
|-
|-
|Recipe name  
|Recipe name  
Line 45: Line 45:
|RI
|RI
|Uniformity [%]
|Uniformity [%]
|Comments
|-  
|-  
|1oxide/1ox_std/standard
|1oxide/1ox_std/standard
Line 50: Line 51:
|1.46
|1.46
|2
|2
|The latest measured values can be seen in the process control sheet in LabManager
|-
|-
|1PBSG
|1PBSG
|~0.3
|~0.3
|
|
|
|
|

Revision as of 15:25, 15 November 2010

At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.


Recipes on PECVD1 for deposition of silicon oxides

Recipes

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] B2H6 flow [sccm] PH3 flow [sccm] Pressure [mTorr] Power [W] Description
1oxide/1ox_std/standard 17 1600 0 0 0 400 380LF Process control recipe. Developed for waveguides
1PBSG Developed for waveguide top cladding by Haiyan Ou @DTU Photonics

Expected results

Recipe name Deposition rate [µm/min] RI Uniformity [%] Comments
1oxide/1ox_std/standard ~0.193 1.46 2 The latest measured values can be seen in the process control sheet in LabManager
1PBSG ~0.3


Recipes on PECVD3 for deposition of silicon oxides

Recipes

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
LFSiO 12 1420 392 550 60

LF=Low Frequency

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%]
LFSiO ~81 ~1.48 <1