Specific Process Knowledge/Lithography/SU-8: Difference between revisions

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 ==Developing==
-Developing of the SU-8 patterns is done in the [[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|special developing station]] placed in cleanroom C-1 at Danchip. Under developing the substrates are immersed in Propylene Glycol Methyl Ether Acetate (PGMEA) first in a bath marked "First" and after in a bath marked "Final".
+'''Development speed:'''
+*Puddle development in mr DEV 600 (PGMEA): ~20 µm/min
+*Immersion development in mr DEV 600 (PGMEA): ~20 µm/min
-The development time is dependent on the layer thickness. Minimum development time: 1 min per 20µm in "First".
-After the development the substrate must be rinsed with Isopropyl Alcohol (IPA) on both side for 30 sec. White traces during rinsing indicate incomplete development of SU-8.
+'''Puddle development:'''
+Puddle development can be done in the Spin coater: gamma ebeam & UV using one of the predefined development sequences. The development is a puddle development, and it requires that the substrate does not have an through holes - if the substrate has
-Finally the substrates are dried in air in the drying box or with a nitrogen gun.
+'''Immersion development:'''<br>
+Immersion development can be done in the [[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|Developer SU-8]] located in cleanroom E-4:
+#The development time is dependent on the layer thickness. Minimum development time in "First" bath is 1 min per 20 µm resist film thickness
+#After development the substrate must be rinsed with IPA on both sides for ~30 sec. White traces during rinsing indicates incomplete development of SU-8
+#Finally the substrates are dried in air in the drying bath or with a nitrogen gun
 ==Phd. work on the topic==