Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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|'''[[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]''' | |'''[[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]''' | ||
|'''[[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]''' | |'''[[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]''' | ||
|'''[[Specific_Process_Knowledge/Lithography/TIspray|TI Spray]]''' | |||
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|Positive | |Positive | ||
|Negative | |Negative | ||
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*Positive | |||
*Negative (image reversal) | |||
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|5 - 10 µm | |5 - 10 µm | ||
|1 - 200 µm | |1 - 200 µm | ||
|0.5 - 5 µm | |||
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Manual coaters:<br> | Manual coaters:<br> | ||
*Spin coater: RCD8 | *Spin coater: RCD8 | ||
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Spray coater | |||
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|310 - 445 nm | |310 - 445 nm | ||
|300 - 375 nm | |300 - 375 nm | ||
|310 - 440 nm | |||
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|AZ 726 MIF | |AZ 726 MIF | ||
|mr-DEV 600 (PGMEA) | |mr-DEV 600 (PGMEA) | ||
|AZ 726 MIF | |||
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|DIW | |DIW | ||
|IPA | |IPA | ||
|DIW | |||
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Plasma ashing can remove crosslinked SU-8 | Plasma ashing can remove crosslinked SU-8 | ||
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*Acetone | |||
*Remover 1165 | |||
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*High aspect ratio | *High aspect ratio | ||
*Resist thickness 1 µm to several 100 µm | *Resist thickness 1 µm to several 100 µm | ||
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Spray coater specific resist | |||
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Most of the process knowledge on SU-8 is based in research groups | Most of the process knowledge on SU-8 is based in research groups | ||
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