Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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|'''Silicon with native oxide''' | |'''Silicon with native oxide''' | ||
|(X) | |align="center"|(X) | ||
|X | |align="center"|X | ||
|X | |align="center"|X | ||
|(X) | |align="center"|(X) | ||
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|'''Silicon oxide''' | |'''Silicon oxide''' | ||
|(X) | |align="center"|(X) | ||
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|X | |align="center"|X | ||
|(X) | |align="center"|(X) | ||
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|'''Silicon nitride''' | |'''Silicon nitride''' | ||
|(X) | |align="center"|(X) | ||
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|X | |align="center"|X | ||
|(X) | |align="center"|(X) | ||
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|'''Glass (borofloat/pyrex)''' | |'''Glass (borofloat/pyrex)''' | ||
|X | |align="center"|X | ||
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|X | |align="center"|X | ||
|(X) | |align="center"|(X) | ||
|Dehydration before HMDS is probably best | |Dehydration before HMDS is probably best | ||
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|'''Fused silica (quartz)''' | |'''Fused silica (quartz)''' | ||
|X | |align="center"|X | ||
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|X | |align="center"|X | ||
|(X) | |align="center"|(X) | ||
|Dehydration before HMDS is probably best | |Dehydration before HMDS is probably best | ||
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
|'''InGaAs''' | |'''InGaAs''' | ||
|(X) | |align="center"|(X) | ||
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|SurPass 3000 | |align="center"|SurPass 3000 | ||
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|'''GaAs''' | |'''GaAs''' | ||
|(X) | |align="center"|(X) | ||
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|SurPass 3000 | |align="center"|SurPass 3000 | ||
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|'''GaP''' | |'''GaP''' | ||
|(X) | |align="center"|(X) | ||
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|? | |align="center"|? | ||
|AR800-30 is being tested (leaves residue) | |AR800-30 is being tested (leaves residue) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
|'''InP''' | |'''InP''' | ||
|(X) | |align="center"|(X) | ||
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|? | |align="center"|? | ||
|AR800-30 is being tested (leaves residue) | |AR800-30 is being tested (leaves residue) | ||
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|'''GaN''' | |'''GaN''' | ||
|(X) | |align="center"|(X) | ||
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|? | |align="center"|? | ||
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|'''InN''' | |'''InN''' | ||
|(X) | |align="center"|(X) | ||
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|? | |align="center"|? | ||
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