Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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BHF is mostly used to do pretreatment for new Si wafers.<br> | BHF is mostly used to do pretreatment for new Si wafers.<br> | ||
The native oxide layer will be removed | The native oxide layer will be removed by 30 seconds of etching and this will promote the resist adhesion on the Si substrates. We recommend to spin coat resist as soon as possible after the procedure. | ||
'''The user manual, user APV, and contact information can be found in LabManager:''' | '''The user manual, user APV, and contact information can be found in LabManager:''' | ||
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===Process information=== | ===Process information=== | ||
More information on BHF: | |||
[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | ||