Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
Appearance
No edit summary |
|||
| Line 113: | Line 113: | ||
<br clear="all" /> | <br clear="all" /> | ||
=Aligner: MA6 - 2= | |||
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | ||