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Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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|PEB: 60 s at 110°C
|PEB: 60 s at 110°C
Side wall angle ~15°. For lover angle, develop 30 s (~5°)
Side wall angle ~15°. For lover angle, develop 30 s (~5°)
|}
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==Aligner: MA6 - 2==
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers.
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|-style="background:silver; color:black"
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!Date
!Thickness
!Dose
![[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Development]]
!Comments
|-
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"|AZ 5214E<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|72 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Positive process
|-style="background:WhiteSmoke; color:black"
|Long ago
|2.2 µm
|90 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-
|-
|-style="background:LightGrey; color:black"
!rowspan="2"|AZ 5214E Image Reversal<br><span style="color:red">Old German version</span>
|Long ago
|1.5 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|Image reversal process.<br>Reversal bake: 120s at 110°C.<br>Flood exposure: 200 mJ/cm<sup>2</sup>
|-style="background:LightGrey; color:black"
|Long ago
|2.2 µm
|25 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span>
|Long ago
|1.5 µm
|169 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="2"|PEB: 60 s at 110°C
|-style="background:WhiteSmoke; color:black"
|Long ago
|2 µm
|~200 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|-style="background:WhiteSmoke; color:black"
|Long ago
|4 µm
|~280 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|rowspan="1"|PEB: 60 s at 110°C<br>Process adopted from process logs
|-
|-
|-style="background:LightGrey; color:black"
!AZ nLOF 2020
|Long ago
|1.5 µm
|104 mJ/cm<sup>2</sup>
|Single puddle, 30 s
|PEB: 60 s at 110°C<br>Use 60 s development for lift-off
|-
|-
|-style="background:WhiteSmoke; color:black"
!AZ 5214E<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|1.5 µm
|70 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|
|-
|-
|-style="background:LightGrey; color:black"
!AZ 5214E Image Reversal<br><span style="color:green">New Japanese version</span>
|2023-01-11<br>jehem
|2.2 µm
|22 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|Image reversal process.<br>Reversal bake: 60s at 110°C.<br>Flood exposure: 500 mJ/cm<sup>2</sup>
|-
|-
|-style="background:WhiteSmoke; color:black"
!AZ 4562<br><span style="color:green">New Japanese version</span>
|2021-12-08<br>jehem
|10 µm
|550 mJ/cm<sup>2</sup>
|Multiple puddles, 5 x 60 s
|Priming: HMDS<BR>Rehydration after SB: 1 hour (may not be necessary)<br>Exposure: Multiple exposures with pauses, 5 x (10 s exposure + 10 s pause)<br>Degassing after exposure: 1 hour (may not be necessary)
|-
|-
|-style="background:LightGrey; color:black"
!AZ MiR 701<br><span style="color:green">New PFOA free version</span>
|2021-06-23<br>elkh
|1.5 µm
|~150 mJ/cm<sup>2</sup>
|Single puddle, 60 s
|PEB: 60 s at 110°C
|-
|}
|}
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